PJM3415PSA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PJM3415PSA
Código: 3415K
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.5 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 17.2 nC
Tiempo de subida (tr): 17 nS
Conductancia de drenaje-sustrato (Cd): 205 pF
Resistencia entre drenaje y fuente RDS(on): 0.05 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET PJM3415PSA
PJM3415PSA Datasheet (PDF)
pjm3415psa.pdf
PJM3415PSASilicon P-Channel Power MOSFETSOT-23Features Low Gate Charge and RDS(on) ESD protected(HBM) up to 2KV1. Gate 2.Source 3.DrainMarking: 3415K Schematic DiagramApplication Load switch and in PWM applicationsDGSAbsolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter Symbol Maximum UnitsDrain-Source Voltage -V 20 V DS
pjm3400nsa.pdf
PJM3400NSAN- Enhancement Mode Field Effect TransistorSOT-23 Features VDS = 30V,ID = 5.8ARDS(ON)
pjm3401psc.pdf
PJM3401PSCP-Channel Power MOSFETSOT-23-3 Features VDS= -30V I = -4.5AD RDS(ON)= 60m(max) @-10V2 Halogen and Antimony Free31Applications1. Gate 2.Source 3.Drain Load Switch and in PWM ApplicationsMarking: P1Schematic DiagramDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter Symbol Valu
pjm3401psa.pdf
PJM3401PSA P-Enhancement Field Effect TransistorFeaturesSOT-23 High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation1. Gate 2.Source 3.DrainMarking: R1ApplicationsSchematic Diagram Power switching applicationDrain3 Hard switched and high frequency circuits Unint
pjm3407psa.pdf
PJM3407PSAP Enhancement Field Effect TransistorSOT-23Features VDS=-30V, ID=-4.1ARDS(on)=50m (Typ.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge1. Gate 2.Source 3.DrainMarking: R7ApplicationsSchematic Diagram Load Switch and in PWM ApplicationsDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless ot
pjm3400nsc.pdf
PJM3400NSCN- Enhancement Mode Field Effect TransistorSOT-23-3 Features VDS = 30V,ID = 5.8ARDS(ON)
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
