PJM3415PSA Todos los transistores

PJM3415PSA Silicon P-Channel Power MOSFET SOT-23 Features Low Gate Charge and RDS(on) ESD protected(HBM) up to 2KV 1. Gate 2.Source 3.Drain Marking 3415K Schematic Diagram Application Load switch and in PWM applications D G S Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified. Parameter Symbol Maximum Units Drain-Source Voltage -V 20 V DS

PJM3400NSA N- Enhancement Mode Field Effect Transistor SOT-23 Features VDS = 30V,ID = 5.8A RDS(ON)

PJM3401PSC P-Channel Power MOSFET SOT-23-3 Features VDS= -30V I = -4.5A D RDS(ON)= 60m (max) @-10V 2 Halogen and Antimony Free 3 1 Applications 1. Gate 2.Source 3.Drain Load Switch and in PWM Applications Marking P1 Schematic Diagram Drain 3 1 Gate Source 2 Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified. Parameter Symbol Valu

PJM3401PSA P-Enhancement Field Effect Transistor Features SOT-23 High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation 1. Gate 2.Source 3.Drain Marking R1 Applications Schematic Diagram Power switching application Drain 3 Hard switched and high frequency circuits Unint

PJM3407PSA P Enhancement Field Effect Transistor SOT-23 Features VDS=-30V, ID=-4.1A RDS(on)=50m (Typ.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge 1. Gate 2.Source 3.Drain Marking R7 Applications Schematic Diagram Load Switch and in PWM Applications Drain 3 1 Gate Source 2 Absolute Maximum Ratings Ratings at TA =25 unless ot

PJM3400NSC N- Enhancement Mode Field Effect Transistor SOT-23-3 Features VDS = 30V,ID = 5.8A RDS(ON)