PJM3415PSASilicon P-Channel Power MOSFETSOT-23Features Low Gate Charge and RDS(on) ESD protected(HBM) up to 2KV1. Gate 2.Source 3.DrainMarking: 3415K Schematic DiagramApplication Load switch and in PWM applicationsDGSAbsolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter Symbol Maximum UnitsDrain-Source Voltage -V 20 V DS

PJM3400NSAN- Enhancement Mode Field Effect TransistorSOT-23 Features VDS = 30V,ID = 5.8ARDS(ON)

PJM3401PSCP-Channel Power MOSFETSOT-23-3 Features VDS= -30V I = -4.5AD RDS(ON)= 60m(max) @-10V2 Halogen and Antimony Free31Applications1. Gate 2.Source 3.Drain Load Switch and in PWM ApplicationsMarking: P1Schematic DiagramDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter Symbol Valu

PJM3401PSA P-Enhancement Field Effect TransistorFeaturesSOT-23 High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation1. Gate 2.Source 3.DrainMarking: R1ApplicationsSchematic Diagram Power switching applicationDrain3 Hard switched and high frequency circuits Unint

PJM3407PSAP Enhancement Field Effect TransistorSOT-23Features VDS=-30V, ID=-4.1ARDS(on)=50m (Typ.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge1. Gate 2.Source 3.DrainMarking: R7ApplicationsSchematic Diagram Load Switch and in PWM ApplicationsDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless ot

PJM3400NSCN- Enhancement Mode Field Effect TransistorSOT-23-3 Features VDS = 30V,ID = 5.8ARDS(ON)