PJM3415PSA
MOSFET. Datasheet pdf. Equivalent
Type Designator: PJM3415PSA
Marking Code: 3415K
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17.2
nC
trⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 205
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package:
SOT23
PJM3415PSA
Datasheet (PDF)
..1. Size:1438K pjsemi
pjm3415psa.pdf
PJM3415PSASilicon P-Channel Power MOSFETSOT-23Features Low Gate Charge and RDS(on) ESD protected(HBM) up to 2KV1. Gate 2.Source 3.DrainMarking: 3415K Schematic DiagramApplication Load switch and in PWM applicationsDGSAbsolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter Symbol Maximum UnitsDrain-Source Voltage -V 20 V DS
9.1. Size:2260K pjsemi
pjm3400nsa.pdf
PJM3400NSAN- Enhancement Mode Field Effect TransistorSOT-23 Features VDS = 30V,ID = 5.8ARDS(ON)
9.2. Size:3580K pjsemi
pjm3401psc.pdf
PJM3401PSCP-Channel Power MOSFETSOT-23-3 Features VDS= -30V I = -4.5AD RDS(ON)= 60m(max) @-10V2 Halogen and Antimony Free31Applications1. Gate 2.Source 3.Drain Load Switch and in PWM ApplicationsMarking: P1Schematic DiagramDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter Symbol Valu
9.3. Size:2604K pjsemi
pjm3401psa.pdf
PJM3401PSA P-Enhancement Field Effect TransistorFeaturesSOT-23 High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation1. Gate 2.Source 3.DrainMarking: R1ApplicationsSchematic Diagram Power switching applicationDrain3 Hard switched and high frequency circuits Unint
9.4. Size:1464K pjsemi
pjm3407psa.pdf
PJM3407PSAP Enhancement Field Effect TransistorSOT-23Features VDS=-30V, ID=-4.1ARDS(on)=50m (Typ.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge1. Gate 2.Source 3.DrainMarking: R7ApplicationsSchematic Diagram Load Switch and in PWM ApplicationsDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless ot
9.5. Size:3436K pjsemi
pjm3400nsc.pdf
PJM3400NSCN- Enhancement Mode Field Effect TransistorSOT-23-3 Features VDS = 30V,ID = 5.8ARDS(ON)
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