RU40190R Todos los transistores

 

RU40190R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU40190R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 190 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 96 nS

Cossⓘ - Capacitancia de salida: 950 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm

Encapsulados: TO-220

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RU40190R datasheet

 ..1. Size:305K  ruichips
 ru40190r.pdf pdf_icon

RU40190R

RU40190R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/190A, RDS (ON) =2.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS Switching Applications N-Channel MOSFET Absolute Maximu

 7.1. Size:296K  ruichips
 ru40190q2.pdf pdf_icon

RU40190R

RU40190Q2 N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/190A, RDS (ON) =2.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-3P Applications DC-DC Converters and Off-line UPS Switching Applications N-Channel MOSFET Absolute Maximu

 7.2. Size:296K  ruichips
 ru40190s.pdf pdf_icon

RU40190R

RU40190S N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/190A, RDS (ON) =2.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available TO-263 (RoHS Compliant) Applications DC-DC Converters and Off-line UPS Switching Applications N-Channel MOSFET Absolute Maximu

 8.1. Size:628K  ruichips
 ru40191s.pdf pdf_icon

RU40190R

RU40191S N-Channel Advanced Power MOSFET Features Pin Description 40V/190A, RDS (ON) =1.8m (Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested G S Lead Free and Green Devices Available (RoHS Compliant) TO263 D Applications DC-DC Converters and Off-line UPS Switching Applications G S N-Channel MOSFET Abso

MOSTRAR MÁS

Otros transistores... RU3080L , RU3089M , RU3091M , RU30D20M2 , RU30D20M3 , RU30J30M , RU30L70L , RU30S15H , 2N7002 , RU40191S , RU40C40L4 , RU6070L-A , RU6085H , RU6199S , RU6888 , RU7080R , RU7080S .

History: ME2333-G

 

 

 

 

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