All MOSFET. RU40190R Datasheet

 

RU40190R MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU40190R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 190 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 96 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-220

 RU40190R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU40190R Datasheet (PDF)

 ..1. Size:305K  ruichips
 ru40190r.pdf

RU40190R RU40190R

RU40190RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/190A,RDS (ON) =2.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu

 7.1. Size:296K  ruichips
 ru40190q2.pdf

RU40190R RU40190R

RU40190Q2N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/190A,RDS (ON) =2.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-3PApplications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu

 7.2. Size:296K  ruichips
 ru40190s.pdf

RU40190R RU40190R

RU40190SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/190A,RDS (ON) =2.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu

 8.1. Size:628K  ruichips
 ru40191s.pdf

RU40190R RU40190R

RU40191SN-Channel Advanced Power MOSFETFeatures Pin Description 40V/190A, RDS (ON) =1.8m(Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedGS Lead Free and Green Devices Available (RoHS Compliant)TO263DApplications DC-DC Converters and Off-line UPS Switching ApplicationsGSN-Channel MOSFETAbso

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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