RUH30150M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RUH30150M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 126 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 14 nS
Cossⓘ - Capacitancia de salida: 3250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm
Encapsulados: PDFN5060
Búsqueda de reemplazo de RUH30150M MOSFET
- Selecciónⓘ de transistores por parámetros
RUH30150M datasheet
..1. Size:384K ruichips
ruh30150m.pdf 
RUH30150M N-Channel Advanced Power MOSFET Features Pin Description 30V/150A, RDS (ON) =0.9m (Typ.)@VGS=10V D D D D RDS (ON) =1.4m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN5060 D Applications DC/DC Converters On board power
8.1. Size:385K ruichips
ruh30120m-c.pdf
RUH30120M-C N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =1.6m (Typ.)@VGS=10V D D D D RDS (ON) =2.0m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN5060 D Applications DC/DC Converters On board powe
9.1. Size:286K ruichips
ruh30j105m.pdf
RUH30J105M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/120A RDS (ON) =2.2m (Typ.)@VGS=10V RDS (ON) =3.0m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Com
9.2. Size:286K ruichips
ruh30j85m.pdf
RUH30J85M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/90A RDS (ON) =3.5m (Typ.)@VGS=10V RDS (ON) =5m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Complia
9.3. Size:457K ruichips
ruh3051m.pdf
RUH3051M N-Channel Advanced Power MOSFET Features Pin Description 30V/50A, RDS (ON) =5m (Typ.)@VGS=10V D RDS (ON) =7.5m (Typ.)@VGS=4.5V DD D Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G S Lead Free and Green Devices Available (RoHS Compliant) S S PIN1 DFN5060 D Applications DC/DC Converters On board power for server
9.4. Size:286K ruichips
ruh30j95m.pdf
RUH30J95M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/90A RDS (ON) =2.8m (Typ.)@VGS=10V RDS (ON) =4.2m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Compl
9.5. Size:414K ruichips
ruh3051m2.pdf
RUH3051M2 N-Channel Advanced Power MOSFET Features Pin Description 30V/50A, RDS (ON) =4.2m (Typ.)@VGS=10V D D D D RDS (ON) =6m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN3333 D Applications DC/DC Converters On board power for
9.6. Size:319K ruichips
ruh3025m3.pdf
RUH3025M3 N-Channel Advanced Power MOSFET Features Pin Description 30V/25A, D RDS (ON) =10m (Typ.)@VGS=10V D D RDS (ON) =16m (Typ.)@VGS=4.5V D Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G Ultra Low On-Resistance S S S ESD protected 100% Avalanche Tested PIN1 Lead Free and Green Devices (RoHS Compliant) D
9.7. Size:285K ruichips
ruh3090m.pdf
RUH3090M N-Channel Advanced Power MOSFET Features Pin Description 30V/90A, D D RDS (ON) =2.6m (Typ.)@VGS=10V D D RDS (ON) =3.6m (Typ.)@VGS=4.5V Using Ruichips Advanced SGTTM Technology G Ultra Low On-Resistance S S 100% Avalanche Tested S Reliable and Rugged Qualified According to JEDEC Criteria PIN1 Lead Free and Green Devices (RoHS Compliant
9.8. Size:562K ruichips
ruh3030m3.pdf
RUH3030M3 N-Channel Advanced Power MOSFET Features Pin Description 30V/30A, RDS (ON) =5m (Typ.)@VGS=10V D D RDS (ON) =8.5m (Typ.)@VGS=4.5V D D Ultra Low On-Resistance Uses Ruichips advanced RUISGTTM technology 100% avalanche tested SG Lead Free and Green Devices Available (RoHS Compliant) S S PIN1 PIN1 DFN3030 D Applications DC/DC Converters
9.9. Size:716K ruichips
ruh30j120m.pdf
RUH30J120M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/50A RDS (ON) =3.8m (Typ.)@VGS=10V RDS (ON) =5.5m (Typ.)@VGS=4.5V Die 2 30V/120A RDS (ON) =2.2m (Typ.)@VGS=10V RDS (ON) =3.0m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS
9.10. Size:684K ruichips
ruh30j51m.pdf
RUH30J51M Dual Symmetric N-Channel MOSFET Features Pin Description 30V/50A, S2 S2 RDS (ON) =5m (Typ.)@VGS=10V S2 G2 RDS (ON) =8m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed D1 D1 D1 100% avalanche tested 100% avalanche tested D1 Lead Free and Green Devices Available (RoHS Compliant) G1 PIN1 DFN5*6 Applications pp DC/DC Co
9.11. Size:708K ruichips
ruh3090m3-c.pdf
RUH3090M3-C N-Channel Advanced Power MOSFET Features Pin Description 30V/90A, RDS (ON) =2.7m (Typ.)@VGS=10V D D D RDS (ON) =4m (Typ.)@VGS=4.5V D Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G Ultra Low On-Resistance S S Excellent QgxRDS(on) product(FOM) S 100% Avalanche Tested PIN1 Lead Free and Green Devi
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