RUH30150M PDF and Equivalents Search

 

RUH30150M Specs and Replacement

Type Designator: RUH30150M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 126 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 3250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm

Package: PDFN5060

RUH30150M substitution

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RUH30150M datasheet

 ..1. Size:384K  ruichips
ruh30150m.pdf pdf_icon

RUH30150M

RUH30150M N-Channel Advanced Power MOSFET Features Pin Description 30V/150A, RDS (ON) =0.9m (Typ.)@VGS=10V D D D D RDS (ON) =1.4m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN5060 D Applications DC/DC Converters On board power ... See More ⇒

 8.1. Size:385K  ruichips
ruh30120m-c.pdf pdf_icon

RUH30150M

RUH30120M-C N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =1.6m (Typ.)@VGS=10V D D D D RDS (ON) =2.0m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN5060 D Applications DC/DC Converters On board powe... See More ⇒

 9.1. Size:286K  ruichips
ruh30j105m.pdf pdf_icon

RUH30150M

RUH30J105M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/120A RDS (ON) =2.2m (Typ.)@VGS=10V RDS (ON) =3.0m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Com... See More ⇒

 9.2. Size:286K  ruichips
ruh30j85m.pdf pdf_icon

RUH30150M

RUH30J85M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/90A RDS (ON) =3.5m (Typ.)@VGS=10V RDS (ON) =5m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Complia... See More ⇒

Detailed specifications: RU7088R, RU75N08, RU75N08L, RU75N08S, RU8205BC6, RU8590S, RUH1H150R, RUH30120M-C, AON6380, RUH3051M2, RUH40130M, RUH40140M, RUH4040M2, RUH60100M, SIF4N65F, SIF5N65F, LPN1010C

Keywords - RUH30150M MOSFET specs

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