3415E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.3415E (S&CIC1597) 9V P MOS R

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET LP3415ELT1GV = -20V DSS-LP3415ELT1GR Vgs@-4.5V, Ids@-4A = 60 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-4A = 753mRDS(ON), Vgs@-1.8V, Ids@-2A = 85Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2we declare that the material of product SOT 23 (

MMP3415EData SheetM-MOS Semiconductor Hong Kong Limited20V P-Channel Enhancement-Mode MOSFETVDS= -20V ID= -4A ESD Protected Gate : 3000VRDS(ON), Vgs@-4.5V, Ids@-4A = 55mRDS(ON), Vgs@-2.5V, Ids@-4A = 63mRDS(ON), Vgs@-1.8V, Ids@-2A = 73mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT-23 Internal Schematic DiagramTo

http://www.ncepower.com NCE3415ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =-4

AS3415E P-Channel Enhancement Mode MOSFETProduct Summary V R I (BR)DSS DS(on)MAX D36m@-4.5V -20V 49m@-2.5V -5.6A 69m@-1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter ESD Protected Up to 2.0KV (HBM) Package Circuit diagram SOT-23

BM3415EMOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-Features Low RDS(on) @VGS=-4.5V -3.3V Logic Level Control P Channel SOT23 Package HMB ESD Protection 2KV Pb-Free, RoHS CompliantApplicationsV R Typ I Max(BR)DSS DS(ON) D Load Switch37m @-4.5V Switching circuits-20V -4.8A High-speed line driver43m @ -3.3V Power Manage

HSS3415E P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS3415E is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.3 A The HSS3415E meet the RoHS and Green Product requirement with full function reliability approved. l Sup

HM3415EP-Channel Enhancement Mode Power MOSFET Description The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A Schematic diagram RDS(ON)