3415E Todos los transistores

 ..1. Size:192K  cn shenzhen fuman elec
 3415e.pdf

FM , FM WWW.SZLCSC.COM, SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3415E ( S&CIC1597) 9V P MOS R

 0.1. Size:312K  lrc
 lp3415elt1g s-lp3415elt1g.pdf

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP3415ELT1G V = -20V DS S-LP3415ELT1G R Vgs@-4.5V, Ids@-4A = 60 m DS(ON), m R DS(ON), Vgs@-2.5V, Ids@-4A = 75 3 m RDS(ON), Vgs@-1.8V, Ids@-2A = 85 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 we declare that the material of product SOT 23 (

 0.2. Size:171K  m-mos
 mmp3415e.pdf

MMP3415E Data Sheet M-MOS Semiconductor Hong Kong Limited 20V P-Channel Enhancement-Mode MOSFET VDS= -20V ID= -4A ESD Protected Gate 3000V RDS(ON), Vgs@-4.5V, Ids@-4A = 55m RDS(ON), Vgs@-2.5V, Ids@-4A = 63m RDS(ON), Vgs@-1.8V, Ids@-2A = 73m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT-23 Internal Schematic Diagram To

 0.3. Size:242K  ncepower
 nce3415e.pdf

http //www.ncepower.com NCE3415E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =-4

 0.4. Size:1296K  allpower
 ap3415e.pdf

 0.5. Size:352K  anbon
 as3415e.pdf

AS3415E P-Channel Enhancement Mode MOSFET Product Summary V R I (BR)DSS DS(on)MAX D 36m @-4.5V -20V 49m @-2.5V -5.6A 69m @-1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter ESD Protected Up to 2.0KV (HBM) Package Circuit diagram SOT-23

 0.6. Size:1369K  born
 bm3415e.pdf

BM3415E MOSFET ROHS P-Channel Enhancement-Mode MOSFET SOT-23 - Features Low RDS(on) @VGS=-4.5V -3.3V Logic Level Control P Channel SOT23 Package HMB ESD Protection 2KV Pb-Free, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D Load Switch 37m @-4.5V Switching circuits -20V -4.8A High-speed line driver 43m @ -3.3V Power Manage

 0.7. Size:2205K  huashuo
 hss3415e.pdf

HSS3415E P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS3415E is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.3 A The HSS3415E meet the RoHS and Green Product requirement with full function reliability approved. l Sup

 0.8. Size:883K  cn agmsemi
 agm3415e.pdf

AGM3415E Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics -I (A) D -I (A) D 20 20 16 16 VGS=- 100 4.5V 12 12 VGS=-3V 25 -2V 8 8 4 4 -1.5V -V (V) GS -V (V) DS 0 0 0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 Figure 3 On-resistance vs. Drain Current Figure 4 Body Diode Characteristics I (A

 0.9. Size:577K  cn hmsemi
 hm3415e.pdf

HM3415E P-Channel Enhancement Mode Power MOSFET Description The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A Schematic diagram RDS(ON)