3415E - описание и поиск аналогов

FM , FM WWW.SZLCSC.COM, SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3415E ( S&CIC1597) 9V P MOS R

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP3415ELT1G V = -20V DS S-LP3415ELT1G R Vgs@-4.5V, Ids@-4A = 60 m DS(ON), m R DS(ON), Vgs@-2.5V, Ids@-4A = 75 3 m RDS(ON), Vgs@-1.8V, Ids@-2A = 85 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 we declare that the material of product SOT 23 (

MMP3415E Data Sheet M-MOS Semiconductor Hong Kong Limited 20V P-Channel Enhancement-Mode MOSFET VDS= -20V ID= -4A ESD Protected Gate 3000V RDS(ON), Vgs@-4.5V, Ids@-4A = 55m RDS(ON), Vgs@-2.5V, Ids@-4A = 63m RDS(ON), Vgs@-1.8V, Ids@-2A = 73m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT-23 Internal Schematic Diagram To

http //www.ncepower.com NCE3415E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =-4

AS3415E P-Channel Enhancement Mode MOSFET Product Summary V R I (BR)DSS DS(on)MAX D 36m @-4.5V -20V 49m @-2.5V -5.6A 69m @-1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter ESD Protected Up to 2.0KV (HBM) Package Circuit diagram SOT-23

BM3415E MOSFET ROHS P-Channel Enhancement-Mode MOSFET SOT-23 - Features Low RDS(on) @VGS=-4.5V -3.3V Logic Level Control P Channel SOT23 Package HMB ESD Protection 2KV Pb-Free, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D Load Switch 37m @-4.5V Switching circuits -20V -4.8A High-speed line driver 43m @ -3.3V Power Manage

HSS3415E P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS3415E is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.3 A The HSS3415E meet the RoHS and Green Product requirement with full function reliability approved. l Sup

AGM3415E Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics -I (A) D -I (A) D 20 20 16 16 VGS=- 100 4.5V 12 12 VGS=-3V 25 -2V 8 8 4 4 -1.5V -V (V) GS -V (V) DS 0 0 0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 Figure 3 On-resistance vs. Drain Current Figure 4 Body Diode Characteristics I (A

HM3415E P-Channel Enhancement Mode Power MOSFET Description The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A Schematic diagram RDS(ON)