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PDB3010H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDB3010H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 19.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
   Paquete / Cubierta: DFN3X3
 

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PDB3010H Datasheet (PDF)

 ..1. Size:585K  potens
 pdb3010h.pdf pdf_icon

PDB3010H

30V N-Channel MOSFETs PDB3010H General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 10.5m 19.5A advanced technology has been especially tailored to Q2 30V 10.5m 19.5A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Fea

 9.1. Size:228K  fairchild semi
 fpdb30ph60.pdf pdf_icon

PDB3010H

January, 2006FPDB30PH60Smart Power Module for Front-End RectifierGeneral Description FeaturesFPDB30PH60 is an advanced smart power module of Low thermal resistance due to Al2O3-DBC substratePFC(Power Factor Correction) that Fairchild has newly 600V-30A 2-phase IGBT PWM semi-converter includingdeveloped and designed mainly targeting mid-powera drive IC for gate driving and

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