All MOSFET. PDB3010H Datasheet

 

PDB3010H Datasheet and Replacement


   Type Designator: PDB3010H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: DFN3X3
 

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PDB3010H Datasheet (PDF)

 ..1. Size:585K  potens
 pdb3010h.pdf pdf_icon

PDB3010H

30V N-Channel MOSFETs PDB3010H General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 10.5m 19.5A advanced technology has been especially tailored to Q2 30V 10.5m 19.5A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Fea

 9.1. Size:228K  fairchild semi
 fpdb30ph60.pdf pdf_icon

PDB3010H

January, 2006FPDB30PH60Smart Power Module for Front-End RectifierGeneral Description FeaturesFPDB30PH60 is an advanced smart power module of Low thermal resistance due to Al2O3-DBC substratePFC(Power Factor Correction) that Fairchild has newly 600V-30A 2-phase IGBT PWM semi-converter includingdeveloped and designed mainly targeting mid-powera drive IC for gate driving and

Datasheet: PTN3006 , PTN30P03 , PTP10HN10 , PTP12HN06 , PTY12HN06 , PTP4N60 , PTF4N60 , PDB1216E , 4435 , PDC2306Z , PDC2603Z , PDC2604Z , PDC3801R , PDC3803R , PDC3810V , PDC3902X , PDC3903X .

History: AOUS66620 | 6N60KG-TA3-T | 5N65G-TA3-T | UPA1764G | 2N60L-T6C-K | PECH1EU | STD5NK50ZT4

Keywords - PDB3010H MOSFET datasheet

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