PDB3010H Spec and Replacement
Type Designator: PDB3010H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: DFN3X3
PDB3010H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDB3010H Specs
pdb3010h.pdf
30V N-Channel MOSFETs PDB3010H General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 10.5m 19.5A advanced technology has been especially tailored to Q2 30V 10.5m 19.5A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Fea... See More ⇒
fpdb30ph60.pdf
January, 2006 FPDB30PH60 Smart Power Module for Front-End Rectifier General Description Features FPDB30PH60 is an advanced smart power module of Low thermal resistance due to Al2O3-DBC substrate PFC(Power Factor Correction) that Fairchild has newly 600V-30A 2-phase IGBT PWM semi-converter including developed and designed mainly targeting mid-power a drive IC for gate driving and... See More ⇒
Detailed specifications: PTN3006 , PTN30P03 , PTP10HN10 , PTP12HN06 , PTY12HN06 , PTP4N60 , PTF4N60 , PDB1216E , 5N65 , PDC2306Z , PDC2603Z , PDC2604Z , PDC3801R , PDC3803R , PDC3810V , PDC3902X , PDC3903X .
History: FQA46N15 | F4N60 | FBM80N70P | F20S60C3 | AP4406A | RJK0390DPA | JCS8N60C
Keywords - PDB3010H MOSFET specs
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