PDB3010H Datasheet. Specs and Replacement
Type Designator: PDB3010H 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: DFN3X3
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PDB3010H datasheet
pdb3010h.pdf
30V N-Channel MOSFETs PDB3010H General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 10.5m 19.5A advanced technology has been especially tailored to Q2 30V 10.5m 19.5A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Fea... See More ⇒
fpdb30ph60.pdf
January, 2006 FPDB30PH60 Smart Power Module for Front-End Rectifier General Description Features FPDB30PH60 is an advanced smart power module of Low thermal resistance due to Al2O3-DBC substrate PFC(Power Factor Correction) that Fairchild has newly 600V-30A 2-phase IGBT PWM semi-converter including developed and designed mainly targeting mid-power a drive IC for gate driving and... See More ⇒
Detailed specifications: PTN3006, PTN30P03, PTP10HN10, PTP12HN06, PTY12HN06, PTP4N60, PTF4N60, PDB1216E, 5N65, PDC2306Z, PDC2603Z, PDC2604Z, PDC3801R, PDC3803R, PDC3810V, PDC3902X, PDC3903X
Keywords - PDB3010H MOSFET specs
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