PDC3903Z Datasheet. Equivalente

 ..1. Size:861K  potens
 pdc3903z.pdf

30V P-Channel MOSFETs PDC3903Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -50A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-50A, RDS(ON) =8.5m @VGS = -10V performance, and withstand hig

 7.1. Size:1058K  potens
 pdc3903x.pdf

30V P-Channel MOSFETs PDC3903X General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-60A, RDS(ON) =8.5m @VGS = -10V performance, and withstand hig

 8.1. Size:986K  potens
 pdc3908x.pdf

30V N-Channel MOSFETs PDC3908X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =8.5m @VGS = 10V performance, and withstand high ene

 8.2. Size:301K  potens
 pdc3904z.pdf

30V N-Channel MOSFETs PDC3904Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 3.8m 80A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features 30V,80A, RDS(ON) =3.8m @VGS = 10V performance, and withstand high energ

 8.3. Size:538K  potens
 pdc3906z.pdf

30V N-Channel MOSFETs PDC3906Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 6m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =6m @VGS = 10V performance, and withstand high energy

 8.4. Size:539K  potens
 pdc3905z.pdf

30V P-Channel MOSFETs PDC3905Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 15m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =18m @VGS = -10V performance, and withstand high

 8.5. Size:902K  potens
 pdc3902x.pdf

30V N-Channel MOSFETs PDC3902X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 1.6m 130A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 130A, RDS(ON) =1.6m @VGS = 10V performance, and withstand high

 8.6. Size:828K  potens
 pdc3907z.pdf

30V P-Channel MOSFETs PDC3907Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 18m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =18m @VGS = -10V performance, and withstand high

 8.7. Size:822K  potens
 pdc3908z.pdf

30V N-Channel MOSFETs PDC3908Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 48A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,48A, RDS(ON) =8.5m @VGS = 10V performance, and withstand high ene