PDC3903Z Datasheet. Specs and Replacement

Type Designator: PDC3903Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.5 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: PPAK3X3

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PDC3903Z datasheet

 ..1. Size:861K  potens
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PDC3903Z

30V P-Channel MOSFETs PDC3903Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -50A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-50A, RDS(ON) =8.5m @VGS = -10V performance, and withstand hig... See More ⇒

 7.1. Size:1058K  potens
pdc3903x.pdf pdf_icon

PDC3903Z

30V P-Channel MOSFETs PDC3903X General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-60A, RDS(ON) =8.5m @VGS = -10V performance, and withstand hig... See More ⇒

 8.1. Size:986K  potens
pdc3908x.pdf pdf_icon

PDC3903Z

30V N-Channel MOSFETs PDC3908X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =8.5m @VGS = 10V performance, and withstand high ene... See More ⇒

 8.2. Size:301K  potens
pdc3904z.pdf pdf_icon

PDC3903Z

30V N-Channel MOSFETs PDC3904Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 3.8m 80A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features 30V,80A, RDS(ON) =3.8m @VGS = 10V performance, and withstand high energ... See More ⇒

Detailed specifications: PDC2306Z, PDC2603Z, PDC2604Z, PDC3801R, PDC3803R, PDC3810V, PDC3902X, PDC3903X, IRFP450, PDC3904Z, PDC3905Z, PDC3906Z, PDC3907Z, PDC3908X, PDC3908Z, PDC3912Z, PDC3960X

Keywords - PDC3903Z MOSFET specs

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