PDC3903Z datasheet, аналоги, основные параметры

Наименование производителя: PDC3903Z  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 59 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10.5 ns

Cossⓘ - Выходная емкость: 410 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm

Тип корпуса: PPAK3X3

  📄📄 Копировать 

Аналог (замена) для PDC3903Z

- подборⓘ MOSFET транзистора по параметрам

 

PDC3903Z даташит

 ..1. Size:861K  potens
 pdc3903z.pdf pdf_icon

PDC3903Z

30V P-Channel MOSFETs PDC3903Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -50A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-50A, RDS(ON) =8.5m @VGS = -10V performance, and withstand hig

 7.1. Size:1058K  potens
 pdc3903x.pdf pdf_icon

PDC3903Z

30V P-Channel MOSFETs PDC3903X General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-60A, RDS(ON) =8.5m @VGS = -10V performance, and withstand hig

 8.1. Size:986K  potens
 pdc3908x.pdf pdf_icon

PDC3903Z

30V N-Channel MOSFETs PDC3908X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =8.5m @VGS = 10V performance, and withstand high ene

 8.2. Size:301K  potens
 pdc3904z.pdf pdf_icon

PDC3903Z

30V N-Channel MOSFETs PDC3904Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 3.8m 80A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features 30V,80A, RDS(ON) =3.8m @VGS = 10V performance, and withstand high energ

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... PDC2306Z, PDC2603Z, PDC2604Z, PDC3801R, PDC3803R, PDC3810V, PDC3902X, PDC3903X, IRFP450, PDC3904Z, PDC3905Z, PDC3906Z, PDC3907Z, PDC3908X, PDC3908Z, PDC3912Z, PDC3960X