PDN3916S Todos los transistores

 

PDN3916S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDN3916S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.9 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: SOT23-3S

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PDN3916S datasheet

 ..1. Size:806K  potens
 pdn3916s.pdf pdf_icon

PDN3916S

30V N-Channel MOSFETs PDN3916S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 35m 5.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,5.1A , RDS(ON)=35m @VGS=10V performance, and withstand high e

 8.1. Size:689K  potens
 pdn3912s.pdf pdf_icon

PDN3916S

PDN3912S 30V N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 24m 6.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,6.5A, RDS(ON) =24m @VGS = 10V performance, and withstand high

 8.2. Size:677K  potens
 pdn3914s.pdf pdf_icon

PDN3916S

30V N-Channel MOSFETs PDN3914S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 25m 5.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,5.5A, RDS(ON) =25m @VGS = 10V performance, and withstand high en

 9.1. Size:940K  potens
 pdn3909s.pdf pdf_icon

PDN3916S

30V P-Channel MOSFETs PDN3909S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 32m -5.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-5.1A, RDS(ON) =32m @VGS = -10V performance, and withstand hig

MOSTRAR MÁS

Otros transistores... PDN2312S , PDN2313S , PDN2318S , PDN3611S , PDN3612S , PDN3909S , PDN3912S , PDN3914S , IRF9640 , PDN4911S , PDN6911S , PDP0959 , PDP0980 , PDP3960 , PDQ3714 , PDS3712 , PDS3807 .

History: BSH103 | CS11N90VF

 

 

 

 

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