PDN3916S Datasheet. Specs and Replacement

Type Designator: PDN3916S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.9 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOT23-3S

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PDN3916S datasheet

 ..1. Size:806K  potens
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PDN3916S

30V N-Channel MOSFETs PDN3916S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 35m 5.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,5.1A , RDS(ON)=35m @VGS=10V performance, and withstand high e... See More ⇒

 8.1. Size:689K  potens
pdn3912s.pdf pdf_icon

PDN3916S

PDN3912S 30V N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 24m 6.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,6.5A, RDS(ON) =24m @VGS = 10V performance, and withstand high... See More ⇒

 8.2. Size:677K  potens
pdn3914s.pdf pdf_icon

PDN3916S

30V N-Channel MOSFETs PDN3914S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 25m 5.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,5.5A, RDS(ON) =25m @VGS = 10V performance, and withstand high en... See More ⇒

 9.1. Size:940K  potens
pdn3909s.pdf pdf_icon

PDN3916S

30V P-Channel MOSFETs PDN3909S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 32m -5.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-5.1A, RDS(ON) =32m @VGS = -10V performance, and withstand hig... See More ⇒

Detailed specifications: PDN2312S, PDN2313S, PDN2318S, PDN3611S, PDN3612S, PDN3909S, PDN3912S, PDN3914S, IRF9640, PDN4911S, PDN6911S, PDP0959, PDP0980, PDP3960, PDQ3714, PDS3712, PDS3807

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