PDN3916S - аналоги, даташиты, параметры транзистора

PDN3916S Datasheet (PDF)

..1. Size:806K potens
pdn3916s.pdf pdf_icon

30V N-Channel MOSFETs PDN3916S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 35m 5.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,5.1A , RDS(ON)=35m@VGS=10V performance, and withstand high e

8.1. Size:689K potens
pdn3912s.pdf pdf_icon

PDN3912S 30V N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 24m 6.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,6.5A, RDS(ON) =24m @VGS = 10V performance, and withstand high

8.2. Size:677K potens
pdn3914s.pdf pdf_icon

30V N-Channel MOSFETs PDN3914S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 25m 5.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,5.5A, RDS(ON) =25m @VGS = 10V performance, and withstand high en

9.1. Size:940K potens
pdn3909s.pdf pdf_icon

30V P-Channel MOSFETs PDN3909S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 32m -5.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-5.1A, RDS(ON) =32m@VGS = -10V performance, and withstand hig

Другие MOSFET... PDN2312S , PDN2313S , PDN2318S , PDN3611S , PDN3612S , PDN3909S , PDN3912S , PDN3914S , AON7403 , PDN4911S , PDN6911S , PDP0959 , PDP0980 , PDP3960 , PDQ3714 , PDS3712 , PDS3807 .