SK50N06A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SK50N06A60V N-Channel MOSFET BVDSS RDS(ON),typ. ID General Features 60V 13.5m 55A Proprietary New Trench Technology RDS(ON),typ.=13.5 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications G Automotive D S DC Motor Control Class D Amplifier TO-252 Package No to Scale T =25 unless otherwise sp

www.msksemi.comMSK50N03DFSemiconductorCompianceDescriptionD D D DThe MSK50N03DF is the high cell densitytrenched N-ch MOSFETs, which provideexcellent RDSON and gate charge for most ofthe synchronous buck converter applications.S S S GThe MSK50N03DF meet the RoHS and GreenDFN3X3-8LProduct SummaryBVDSS RDSON ID30V 46A9.5mGreen Device AvailableSuper Low Gate

IGBT with Diode IXSK 50N60AU1 VCES = 600 VIC25 = 75 ACombi Pack VCE(sat) = 2.7 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-264 AAVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AG = Gate, C = Collector,IC90 TC = 90C50 AE = Emit

IGBT with Diode IXSK 50N60BD1 VCES = 600 VIXSX 50N60BD1 IC25 = 75 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPLUS247(IXSX)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 V TO-264 AA(IXSK)VGEM Transient 30 VIC25 TC = 25C, limited by leads 75 AIC90 TC = 90C50 A

IGBT with Diode IXSK 50N60BU1 VCES = 600 VIXSX 50N60BU1 IC25 = 75 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPLUS247(IXSX)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C; RGE = 1 MW 600 VTO-264 AAVGES Continuous 20 V(IXSK)VGEM Transient 30 VIC25 TC = 25C, limited by leads 75 AIC90 TC = 90C50 A