SK50N06A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SK50N06A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 50 nC
   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: TO252

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SK50N06A Datasheet (PDF)

..1. Size:1515K cn shikues
sk50n06a.pdf

SK50N06A60V N-Channel MOSFET BVDSS RDS(ON),typ. ID General Features 60V 13.5m 55A Proprietary New Trench Technology RDS(ON),typ.=13.5 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications G Automotive D S DC Motor Control Class D Amplifier TO-252 Package No to Scale T =25 unless otherwise sp

8.1. Size:548K 1
msk50n03df.pdf

www.msksemi.comMSK50N03DFSemiconductorCompianceDescriptionD D D DThe MSK50N03DF is the high cell densitytrenched N-ch MOSFETs, which provideexcellent RDSON and gate charge for most ofthe synchronous buck converter applications.S S S GThe MSK50N03DF meet the RoHS and GreenDFN3X3-8LProduct SummaryBVDSS RDSON ID30V 46A9.5mGreen Device AvailableSuper Low Gate

9.1. Size:72K ixys
ixsk50n60au1.pdf

IGBT with Diode IXSK 50N60AU1 VCES = 600 VIC25 = 75 ACombi Pack VCE(sat) = 2.7 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-264 AAVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AG = Gate, C = Collector,IC90 TC = 90C50 AE = Emit

9.2. Size:98K ixys
ixsk50n60bd1.pdf

IGBT with Diode IXSK 50N60BD1 VCES = 600 VIXSX 50N60BD1 IC25 = 75 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPLUS247(IXSX)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 V TO-264 AA(IXSK)VGEM Transient 30 VIC25 TC = 25C, limited by leads 75 AIC90 TC = 90C50 A

9.3. Size:142K ixys
ixsk50n60bu1.pdf

IGBT with Diode IXSK 50N60BU1 VCES = 600 VIXSX 50N60BU1 IC25 = 75 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPLUS247(IXSX)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C; RGE = 1 MW 600 VTO-264 AAVGES Continuous 20 V(IXSK)VGEM Transient 30 VIC25 TC = 25C, limited by leads 75 AIC90 TC = 90C50 A

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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