SK50N06A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SK50N06A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 85 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 55 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 50 nC
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 160 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.017 Ohm
Тип корпуса: TO252
SK50N06A Datasheet (PDF)
sk50n06a.pdf
SK50N06A60V N-Channel MOSFET BVDSS RDS(ON),typ. ID General Features 60V 13.5m 55A Proprietary New Trench Technology RDS(ON),typ.=13.5 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications G Automotive D S DC Motor Control Class D Amplifier TO-252 Package No to Scale T =25 unless otherwise sp
msk50n03df.pdf
www.msksemi.comMSK50N03DFSemiconductorCompianceDescriptionD D D DThe MSK50N03DF is the high cell densitytrenched N-ch MOSFETs, which provideexcellent RDSON and gate charge for most ofthe synchronous buck converter applications.S S S GThe MSK50N03DF meet the RoHS and GreenDFN3X3-8LProduct SummaryBVDSS RDSON ID30V 46A9.5mGreen Device AvailableSuper Low Gate
ixsk50n60au1.pdf
IGBT with Diode IXSK 50N60AU1 VCES = 600 VIC25 = 75 ACombi Pack VCE(sat) = 2.7 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-264 AAVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AG = Gate, C = Collector,IC90 TC = 90C50 AE = Emit
ixsk50n60bd1.pdf
IGBT with Diode IXSK 50N60BD1 VCES = 600 VIXSX 50N60BD1 IC25 = 75 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPLUS247(IXSX)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 V TO-264 AA(IXSK)VGEM Transient 30 VIC25 TC = 25C, limited by leads 75 AIC90 TC = 90C50 A
ixsk50n60bu1.pdf
IGBT with Diode IXSK 50N60BU1 VCES = 600 VIXSX 50N60BU1 IC25 = 75 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPLUS247(IXSX)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C; RGE = 1 MW 600 VTO-264 AAVGES Continuous 20 V(IXSK)VGEM Transient 30 VIC25 TC = 25C, limited by leads 75 AIC90 TC = 90C50 A
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
