SK50N06A MOSFET Datasheet: N-Ch, 60V, 55A. Full specification with pinout and replacement list

SK50N06A Specs and Replacement

Type Designator: SK50N06A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO252

SK50N06A substitution

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SK50N06A datasheet

..1. Size:1515K cn shikues
sk50n06a.pdf pdf_icon

SK50N06A 60V N-Channel MOSFET BVDSS RDS(ON),typ. ID General Features 60V 13.5m 55A Proprietary New Trench Technology RDS(ON),typ.=13.5 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications G Automotive D S DC Motor Control Class D Amplifier TO-252 Package No to Scale T =25 unless otherwise sp... See More ⇒

8.1. Size:548K 1
msk50n03df.pdf pdf_icon

www.msksemi.com MSK50N03DF Semiconductor Compiance Description D D D D The MSK50N03DF is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. S S S G The MSK50N03DF meet the RoHS and Green DFN3X3-8L Product Summary BVDSS RDSON ID 30V 46A 9.5m Green Device Available Super Low Gate ... See More ⇒

9.1. Size:72K ixys
ixsk50n60au1.pdf pdf_icon

IGBT with Diode IXSK 50N60AU1 VCES = 600 V IC25 = 75 A Combi Pack VCE(sat) = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-264 AA VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C, limited by leads 75 A G = Gate, C = Collector, IC90 TC = 90 C50 A E = Emit... See More ⇒

9.2. Size:98K ixys
ixsk50n60bd1.pdf pdf_icon

IGBT with Diode IXSK 50N60BD1 VCES = 600 V IXSX 50N60BD1 IC25 = 75 A VCE(sat) = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V TO-264 AA (IXSK) VGEM Transient 30 V IC25 TC = 25 C, limited by leads 75 A IC90 TC = 90 C50 A ... See More ⇒