SWB035R08ET MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SWB035R08ET
Código: SW035R08ET
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 196 W
Voltaje máximo drenador - fuente |Vds|: 80 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 185 nC
Tiempo de subida (tr): 218 nS
Conductancia de drenaje-sustrato (Cd): 885 pF
Resistencia entre drenaje y fuente RDS(on): 0.0041 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET SWB035R08ET
SWB035R08ET Datasheet (PDF)
swb035r08et.pdf
SW035R08ET N-channel Enhanced mode TO-263 MOSFET Features TO-263 BVDSS : 80V High ruggedness ID : 120A Low RDS(ON) (Typ 3.3m)@VGS=10V RDS(ON) : 3.3m Low Gate Charge (Typ 185nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 Application:Synchronous Rectification, Inverter, 2 3 Li Battery Protect Board 1 1. Gate 2. Drain 3. Sou
sw035r08et swb035r08et.pdf
SW035R08ET N-channel Enhanced mode TO-263 MOSFET Features TO-263 BVDSS : 80V High ruggedness ID : 120A Low RDS(ON) (Typ 3.3m)@VGS=10V RDS(ON) : 3.3m Low Gate Charge (Typ 185nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 Application:Synchronous Rectification, Inverter, 2 3 Li Battery Protect Board 1 1. Gate 2. Drain 3. Sou
swp036r10e8s swb036r10e8s.pdf
SW036R10E8SN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 100V High ruggednessID : 175A Low RDS(ON) (Typ 3.8m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :3.8m Improved dv/dt Capability 100% Avalanche Tested211 Application:Synchronous Rectification,2233Li Battery Protect Board, Motor Drivers11. Gate 2.
swp031r06et swb031r06et.pdf
SW031R06ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 120A Low RDS(ON) (Typ 3.0m)@VGS=10V RDS(ON) : 3.0m Low Gate Charge (Typ 148nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Electronic Ballast , Motor 3 3 Control , Synchronous Rectificat
swb038r10es swp038r10es.pdf
SW038R10ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 100V High ruggedness ID : 120A Low RDS(ON) (Typ 3.6m)@VGS=10V RDS(ON) : 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 2 Application:Synchronous Rectification, 2 3 3 Inverter , Li Battery Protect Bo
swp030r04vt swb030r04vt.pdf
SW030R04VTN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 BVDSS : 40VTO-263 High ruggednessID : 130A Low RDS(ON) (Typ 3.7m)@VGS=4.5VRDS(ON) : 3.7m@VGS=4.5V(Typ 2.8m)@VGS=10V Low Gate Charge (Typ 120nC)2.8m@VGS=10V Improved dv/dt Capability 1 12 2 100% Avalanche Tested23 3 Application:Power Supply,LED Boost1. Gate 2.
sw038r10es swb038r10es swp038r10es swt038r10es.pdf
SW038R10ES N-channel Enhanced mode TO-263/TO-220/TO-247 MOSFET Features TO-263 TO-220 TO-247 BVDSS : 100V High ruggedness ID : 120A Low RDS(ON) (Typ 3.6m)@VGS=10V RDS(ON) : 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 2 Application:Synchronous Rectification, 2 2 3 3 3 Inverter ,
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