All MOSFET. SWB035R08ET Datasheet

 

SWB035R08ET Datasheet and Replacement


   Type Designator: SWB035R08ET
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 196 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 218 nS
   Cossⓘ - Output Capacitance: 885 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: TO-263
 

 SWB035R08ET substitution

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SWB035R08ET Datasheet (PDF)

 ..1. Size:646K  samwin
 swb035r08et.pdf pdf_icon

SWB035R08ET

SW035R08ET N-channel Enhanced mode TO-263 MOSFET Features TO-263 BVDSS : 80V High ruggedness ID : 120A Low RDS(ON) (Typ 3.3m)@VGS=10V RDS(ON) : 3.3m Low Gate Charge (Typ 185nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 Application:Synchronous Rectification, Inverter, 2 3 Li Battery Protect Board 1 1. Gate 2. Drain 3. Sou

 ..2. Size:709K  samwin
 sw035r08et swb035r08et.pdf pdf_icon

SWB035R08ET

SW035R08ET N-channel Enhanced mode TO-263 MOSFET Features TO-263 BVDSS : 80V High ruggedness ID : 120A Low RDS(ON) (Typ 3.3m)@VGS=10V RDS(ON) : 3.3m Low Gate Charge (Typ 185nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 Application:Synchronous Rectification, Inverter, 2 3 Li Battery Protect Board 1 1. Gate 2. Drain 3. Sou

 9.1. Size:752K  samwin
 swp036r10e8s swb036r10e8s.pdf pdf_icon

SWB035R08ET

SW036R10E8SN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 100V High ruggednessID : 175A Low RDS(ON) (Typ 3.8m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :3.8m Improved dv/dt Capability 100% Avalanche Tested211 Application:Synchronous Rectification,2233Li Battery Protect Board, Motor Drivers11. Gate 2.

 9.2. Size:725K  samwin
 swp031r06et swb031r06et.pdf pdf_icon

SWB035R08ET

SW031R06ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 120A Low RDS(ON) (Typ 3.0m)@VGS=10V RDS(ON) : 3.0m Low Gate Charge (Typ 148nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Electronic Ballast , Motor 3 3 Control , Synchronous Rectificat

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Datasheet: SSF50R140S , SSP50R140S , SSW50R140S , SSA50R140S , SSF50R240S , SSP50R240S , SSW50R240S , SSA50R240S , P60NF06 , SWB038R10ES , SWP038R10ES , SWT038R10ES , SWH055R03VT , SWHA055R03VT , SWB075R06ET , SWP075R06ET , SWK088R06VT .

History: 2SK1066 | KHB1D0N60G | MTP4435AQ8 | IPDH4N03LAG | SI3469DV | IRFIZ34GPBF | KP801B

Keywords - SWB035R08ET MOSFET datasheet

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