SWB075R06ET Todos los transistores

 

SWB075R06ET MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SWB075R06ET

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 195 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 54 nS

Cossⓘ - Capacitancia de salida: 333 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0094 Ohm

Encapsulados: TO-263

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SWB075R06ET datasheet

 ..1. Size:766K  samwin
swb075r06et swp075r06et.pdf pdf_icon

SWB075R06ET

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 60V High ruggedness ID 100A Low RDS(ON) (Typ 7.5m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

 ..2. Size:738K  samwin
sw075r06et swb075r06et swp075r06et.pdf pdf_icon

SWB075R06ET

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 60V High ruggedness ID 100A Low RDS(ON) (Typ 7.5m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

 6.1. Size:821K  samwin
swp075r08e7t swb075r08e7t.pdf pdf_icon

SWB075R06ET

SW075R08E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness Low RDS(ON) (Typ 8m )@VGS=10V ID 90A Low Gate Charge (Typ 95nC) RDS(ON) 8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source

 9.1. Size:751K  samwin
swp076r68e7t swb076r68e7t.pdf pdf_icon

SWB075R06ET

SW076R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 85A Low RDS(ON) (Typ 7.6m )@VGS=10V Low Gate Charge (Typ 70nC) RDS(ON) 7.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S

Otros transistores... SSW50R240S , SSA50R240S , SWB035R08ET , SWB038R10ES , SWP038R10ES , SWT038R10ES , SWH055R03VT , SWHA055R03VT , 10N65 , SWP075R06ET , SWK088R06VT , SWI088R06VT , SWD088R06VT , SWHA088R06VT , SWU10N70D , SWF10N70K , SWD10N70K .

History: BF999 | HCFL80R380 | IRF7342QPBF | SUD20N10-66L | AUIRF7759L2TR | JCS10N60BT

 

 

 

 

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