All MOSFET. SWB075R06ET Datasheet

 

SWB075R06ET Datasheet and Replacement


   Type Designator: SWB075R06ET
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 333 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
   Package: TO-263
 

 SWB075R06ET substitution

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SWB075R06ET Datasheet (PDF)

 ..1. Size:766K  samwin
 swb075r06et swp075r06et.pdf pdf_icon

SWB075R06ET

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

 ..2. Size:738K  samwin
 sw075r06et swb075r06et swp075r06et.pdf pdf_icon

SWB075R06ET

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

 6.1. Size:821K  samwin
 swp075r08e7t swb075r08e7t.pdf pdf_icon

SWB075R06ET

SW075R08E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggedness Low RDS(ON) (Typ 8m)@VGS=10V ID : 90A Low Gate Charge (Typ 95nC)RDS(ON) : 8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.Source

 9.1. Size:751K  samwin
 swp076r68e7t swb076r68e7t.pdf pdf_icon

SWB075R06ET

SW076R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 85A Low RDS(ON) (Typ 7.6m)@VGS=10V Low Gate Charge (Typ 70nC)RDS(ON) : 7.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

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Datasheet: SSW50R240S , SSA50R240S , SWB035R08ET , SWB038R10ES , SWP038R10ES , SWT038R10ES , SWH055R03VT , SWHA055R03VT , STP80NF70 , SWP075R06ET , SWK088R06VT , SWI088R06VT , SWD088R06VT , SWHA088R06VT , SWU10N70D , SWF10N70K , SWD10N70K .

History: 8N60G-TA3-T

Keywords - SWB075R06ET MOSFET datasheet

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