Справочник MOSFET. SWB075R06ET

 

SWB075R06ET MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SWB075R06ET
   Маркировка: SW075R06ET
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 195 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 100 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 78 nC
   Время нарастания (tr): 54 ns
   Выходная емкость (Cd): 333 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0094 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для SWB075R06ET

 

 

SWB075R06ET Datasheet (PDF)

 ..1. Size:766K  samwin
 swb075r06et swp075r06et.pdf

SWB075R06ET SWB075R06ET

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

 ..2. Size:738K  samwin
 sw075r06et swb075r06et swp075r06et.pdf

SWB075R06ET SWB075R06ET

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

 6.1. Size:821K  samwin
 swp075r08e7t swb075r08e7t.pdf

SWB075R06ET SWB075R06ET

SW075R08E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggedness Low RDS(ON) (Typ 8m)@VGS=10V ID : 90A Low Gate Charge (Typ 95nC)RDS(ON) : 8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.Source

 9.1. Size:751K  samwin
 swp076r68e7t swb076r68e7t.pdf

SWB075R06ET SWB075R06ET

SW076R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 85A Low RDS(ON) (Typ 7.6m)@VGS=10V Low Gate Charge (Typ 70nC)RDS(ON) : 7.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

 9.2. Size:1029K  samwin
 swb072r08et swp072r08et.pdf

SWB075R06ET SWB075R06ET

SW072R08ETN-channel Enhanced mode TO-263/TO-220 MOSFETFeaturesTO-263 TO-220 BVDSS : 80V High ruggednessID : 100A Low RDS(ON) (Typ 6.6m)@VGS=10VRDS(ON) : 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 21 1 Application:Synchronous Rectification, 2 23 3Inverter, Li Battery Protect Board11. Gate 2. Drain 3. So

 9.3. Size:1051K  samwin
 swb078r08et swp078r08et.pdf

SWB075R06ET SWB075R06ET

SW078R08ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features BVDSS :80V TO-263 TO-220 High ruggedness ID :60A Low RDS(ON) (Typ 7.8m)@VGS=10V RDS(ON) : 7.8m Low Gate Charge (Typ 79nC) Improved dv/dt Capability 1 2 100% Avalanche Tested 1 2 3 2 Application:Telecom, Computer,Inverter 3 1 1. Gate 2. Drain 3. Source 3 Ge

 9.4. Size:685K  samwin
 swb072r06et swp072r06et.pdf

SWB075R06ET SWB075R06ET

SW072R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 75A Low RDS(ON) (Typ 6.8m)@VGS=10V Low Gate Charge (Typ 84nC) RDS(ON) : 6.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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