SSU80R850S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSU80R850S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.93 Ohm

Encapsulados: TO251

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SSU80R850S datasheet

 ..1. Size:1290K  cn super semi
 ssf80r850s ssp80r850s sst80r850s ssu80r850s.pdf pdf_icon

SSU80R850S

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power MOSFET SS*80R850S Rev. 2.1 Jun. 2022 www.supersemi.com.cn September, 2013 SJ-FET SSF80R850S/SSP80R850S/SST80R850S/SSU80R850S 800V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utiliz

 8.1. Size:1352K  cn super semi
 ssf80r1k3s ssp80r1k3s sst80r1k3s ssu80r1k3s.pdf pdf_icon

SSU80R850S

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power MOSFET SS*80R1K3S Rev. 2.1 Jun. 2022 www.supersemi.com.cn September, 2013 SJ-FET SSF80R1K3S/SSP80R1K3S/SST80R1K3S/SSU80R1K3S 800V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizi

Otros transistores... SSA80R380S, SSF80R500S, SSP80R500S, SSB80R500S, SST80R500S, SSF80R850S, SSP80R850S, SST80R850S, 10N60, SSP1991, SSP70R450S2, SST70R450S2, SST60R280S2, SST65R280S2, SSW20N60S, SSA20N60S, SSW47N60S