All MOSFET. SSU80R850S Datasheet

 

SSU80R850S Datasheet and Replacement


   Type Designator: SSU80R850S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.93 Ohm
   Package: TO251
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SSU80R850S Datasheet (PDF)

 ..1. Size:1290K  cn super semi
 ssf80r850s ssp80r850s sst80r850s ssu80r850s.pdf pdf_icon

SSU80R850S

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSS*80R850SRev. 2.1Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSF80R850S/SSP80R850S/SST80R850S/SSU80R850S 800V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utiliz

 8.1. Size:1352K  cn super semi
 ssf80r1k3s ssp80r1k3s sst80r1k3s ssu80r1k3s.pdf pdf_icon

SSU80R850S

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSS*80R1K3SRev. 2.1Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSF80R1K3S/SSP80R1K3S/SST80R1K3S/SSU80R1K3S800V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizi

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXTP110N055P | FQB6N70TM | PH4830L | EMH2417R | STD12N06LT4 | CHM62A2PAGP | HUF75307D3

Keywords - SSU80R850S MOSFET datasheet

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