SSU80R850S MOSFET. Datasheet pdf. Equivalent
Type Designator: SSU80R850S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 6.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.5 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.93 Ohm
Package: TO251
SSU80R850S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSU80R850S Datasheet (PDF)
ssf80r850s ssp80r850s sst80r850s ssu80r850s.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSS*80R850SRev. 2.1Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSF80R850S/SSP80R850S/SST80R850S/SSU80R850S 800V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utiliz
ssf80r1k3s ssp80r1k3s sst80r1k3s ssu80r1k3s.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSS*80R1K3SRev. 2.1Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSF80R1K3S/SSP80R1K3S/SST80R1K3S/SSU80R1K3S800V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizi
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
