SSU80R850S Datasheet and Replacement
Type Designator: SSU80R850S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.93 Ohm
Package: TO251
SSU80R850S substitution
SSU80R850S Datasheet (PDF)
ssf80r850s ssp80r850s sst80r850s ssu80r850s.pdf

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSS*80R850SRev. 2.1Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSF80R850S/SSP80R850S/SST80R850S/SSU80R850S 800V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utiliz
ssf80r1k3s ssp80r1k3s sst80r1k3s ssu80r1k3s.pdf

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSS*80R1K3SRev. 2.1Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSF80R1K3S/SSP80R1K3S/SST80R1K3S/SSU80R1K3S800V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizi
Datasheet: SSA80R380S , SSF80R500S , SSP80R500S , SSB80R500S , SST80R500S , SSF80R850S , SSP80R850S , SST80R850S , 7N65 , SSP1991 , SSP70R450S2 , SST70R450S2 , SST60R280S2 , SST65R280S2 , SSW20N60S , SSA20N60S , SSW47N60S .
History: OSG65R099HT3ZF | 2SK2905-01R
Keywords - SSU80R850S MOSFET datasheet
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History: OSG65R099HT3ZF | 2SK2905-01R



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