TSM10NC60CF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSM10NC60CF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 92 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Encapsulados: ITO220S
Búsqueda de reemplazo de TSM10NC60CF MOSFET
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TSM10NC60CF datasheet
tsm10n60ci tsm10n60cz.pdf
TSM10N60 600V N-Channel MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( )(max) ID (A) 2. Drain 3. Source 600 0.75 @ VGS =10V 10 Features Block Diagram Advanced high dense cell design. High Power and Current handing capability. Application Power Supply. Lighting. Ordering Information Part No. Package Packing
tsm10n06cp.pdf
TSM10N06 60V N-Channel MOSFET TO-252 Pin Definition PRODUCT SUMMARY 1. Gate (DPAK) VDS (V) RDSON (m ) ID (A) 2. Drain 3. Source 65 @ VGS = 10V 10 60 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In
tsm10n80ci tsm10n80cz.pdf
TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 800 1.05 @ VGS =10V 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr
Otros transistores... SSA50R100SFD, SSW80R240S, SSA80R240S, Y2N655S, YPN438S, ASM6115, MMFTP3401, GDSSF2300, K4145, TSM150P04LCS, TSM2301A, TSM240N03CX, TSM60NB1R4CH, TSM650P03CX, TSM900N06CH, TSM900N06CP, TSM900N06CW
History: BUK7Y2R5-40H
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