Справочник MOSFET. TSM10NC60CF

 

TSM10NC60CF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TSM10NC60CF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 33 nC
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 92 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
   Тип корпуса: ITO220S

 Аналог (замена) для TSM10NC60CF

 

 

TSM10NC60CF Datasheet (PDF)

 ..1. Size:336K  taiwansemi
 tsm10nc60cf.pdf

TSM10NC60CF TSM10NC60CF

TSM10NC60CF Taiwan Semiconductor N-Channel Power MOSFET 600V, 10A, 0.75 FEATURES KEY PERFORMANCE PARAMETERS 100% UIS and Rg tested PARAMETER VALUE UNIT Advanced planar process VDS 600 V Compliant to RoHS Directive 2011/65/EU and in RDS(on) (max) 0.75 accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 Qg 33 nC APPLICATIONS

 8.1. Size:381K  taiwansemi
 tsm10n60ci tsm10n60cz.pdf

TSM10NC60CF TSM10NC60CF

TSM10N60 600V N-Channel MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)()(max) ID (A) 2. Drain 3. Source 600 0.75 @ VGS =10V 10 Features Block Diagram Advanced high dense cell design. High Power and Current handing capability. Application Power Supply. Lighting. Ordering Information Part No. Package Packing

 8.2. Size:297K  taiwansemi
 tsm10n06cp.pdf

TSM10NC60CF TSM10NC60CF

TSM10N06 60V N-Channel MOSFET TO-252 Pin Definition: PRODUCT SUMMARY 1. Gate (DPAK) VDS (V) RDSON (m) ID (A) 2. Drain 3. Source 65 @ VGS = 10V 10 60 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In

 8.3. Size:419K  taiwansemi
 tsm10n80ci tsm10n80cz.pdf

TSM10NC60CF TSM10NC60CF

TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 1.05 @ VGS =10V 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AO4264E | AO3442

 

 
Back to Top