TSM10NC60CF Datasheet and Replacement

TSM10NC60CF Taiwan Semiconductor N-Channel Power MOSFET 600V, 10A, 0.75 FEATURES KEY PERFORMANCE PARAMETERS 100% UIS and Rg tested PARAMETER VALUE UNIT Advanced planar process VDS 600 V Compliant to RoHS Directive 2011/65/EU and in RDS(on) (max) 0.75 accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 Qg 33 nC APPLICATIONS

TSM10N60 600V N-Channel MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)()(max) ID (A) 2. Drain 3. Source 600 0.75 @ VGS =10V 10 Features Block Diagram Advanced high dense cell design. High Power and Current handing capability. Application Power Supply. Lighting. Ordering Information Part No. Package Packing

TSM10N06 60V N-Channel MOSFET TO-252 Pin Definition: PRODUCT SUMMARY 1. Gate (DPAK) VDS (V) RDSON (m) ID (A) 2. Drain 3. Source 65 @ VGS = 10V 10 60 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In

TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 1.05 @ VGS =10V 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr