TSM10NC60CF Specs and Replacement
Type Designator: TSM10NC60CF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 92 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: ITO220S
TSM10NC60CF substitution
- MOSFET ⓘ Cross-Reference Search
TSM10NC60CF datasheet
tsm10n60ci tsm10n60cz.pdf
TSM10N60 600V N-Channel MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( )(max) ID (A) 2. Drain 3. Source 600 0.75 @ VGS =10V 10 Features Block Diagram Advanced high dense cell design. High Power and Current handing capability. Application Power Supply. Lighting. Ordering Information Part No. Package Packing ... See More ⇒
tsm10n06cp.pdf
TSM10N06 60V N-Channel MOSFET TO-252 Pin Definition PRODUCT SUMMARY 1. Gate (DPAK) VDS (V) RDSON (m ) ID (A) 2. Drain 3. Source 65 @ VGS = 10V 10 60 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In... See More ⇒
tsm10n80ci tsm10n80cz.pdf
TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 800 1.05 @ VGS =10V 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr... See More ⇒
Detailed specifications: SSA50R100SFD, SSW80R240S, SSA80R240S, Y2N655S, YPN438S, ASM6115, MMFTP3401, GDSSF2300, K4145, TSM150P04LCS, TSM2301A, TSM240N03CX, TSM60NB1R4CH, TSM650P03CX, TSM900N06CH, TSM900N06CP, TSM900N06CW
Keywords - TSM10NC60CF MOSFET specs
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