TSM150P04LCS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TSM150P04LCS

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 12.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 269 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: SOP8

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TSM150P04LCS datasheet

 ..1. Size:334K  taiwansemi
 tsm150p04lcs.pdf pdf_icon

TSM150P04LCS

TSM150P04LCS Taiwan Semiconductor P-Channel Power MOSFET -40V, -22A, 15m FEATURES KEY PERFORMANCE PARAMETERS Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT Logic level VDS -40 V Low gate charge for fast power switching RDS(on) VGS = -10V 15 100% UIS and Rg tested m Compliant to RoHS directive 2011/65/EU and in (max) VGS = -4.5V

 9.1. Size:401K  taiwansemi
 tsm15n50ci.pdf pdf_icon

TSM150P04LCS

TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 0.44 @ VGS =10V 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pro

 9.2. Size:102K  taiwansemi
 tsm15n03pq33.pdf pdf_icon

TSM150P04LCS

TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 PRODUCT SUMMARY Pin Definition 1. Source 8. Drain VDS (V) RDS(on)(m ) ID (A) 2. Source 7. Drain 12 @ VGS =10V 7.8 3. Source 6. Drain 30 4. Gate 5. Drain 17 @ VGS =4.5V 7 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 3.6nC (Typ.) Low Crss typical @

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