TSM150P04LCS Taiwan Semiconductor P-Channel Power MOSFET -40V, -22A, 15m FEATURES KEY PERFORMANCE PARAMETERS Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT Logic level VDS -40 V Low gate charge for fast power switching RDS(on) VGS = -10V 15 100% UIS and Rg tested m Compliant to RoHS directive 2011/65/EU and in (max) VGS = -4.5V

TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.44 @ VGS =10V 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pro

TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 12 @ VGS =10V 7.8 3. Source 6. Drain 30 4. Gate 5. Drain 17 @ VGS =4.5V 7 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 3.6nC (Typ.) Low Crss typical @