TSM150P04LCS Datasheet and Replacement. Cross Reference Search

TSM150P04LCS Datasheet (PDF)

..1. Size:334K taiwansemi
tsm150p04lcs.pdf pdf_icon

TSM150P04LCS Taiwan Semiconductor P-Channel Power MOSFET -40V, -22A, 15m FEATURES KEY PERFORMANCE PARAMETERS Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT Logic level VDS -40 V Low gate charge for fast power switching RDS(on) VGS = -10V 15 100% UIS and Rg tested m Compliant to RoHS directive 2011/65/EU and in (max) VGS = -4.5V

9.1. Size:401K taiwansemi
tsm15n50ci.pdf pdf_icon

TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.44 @ VGS =10V 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pro

9.2. Size:102K taiwansemi
tsm15n03pq33.pdf pdf_icon

TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 12 @ VGS =10V 7.8 3. Source 6. Drain 30 4. Gate 5. Drain 17 @ VGS =4.5V 7 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 3.6nC (Typ.) Low Crss typical @

Datasheet: SSW80R240S , SSA80R240S , Y2N655S , YPN438S , ASM6115 , MMFTP3401 , GDSSF2300 , TSM10NC60CF , TK10A60D , TSM2301A , TSM240N03CX , TSM60NB1R4CH , TSM650P03CX , TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM .