WTM2306 Todos los transistores

 

WTM2306 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WTM2306

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm

Encapsulados: SOT23

 Búsqueda de reemplazo de WTM2306 MOSFET

- Selecciónⓘ de transistores por parámetros

 

WTM2306 datasheet

 ..1. Size:782K  wpmtek
 wtm2306.pdf pdf_icon

WTM2306

WTM2306 N-Channel Enhancement Mode Power MOSFET Description The WTM2306 uses advanced trench technology to provide excellent R , This device is suitable for use as a DS(ON) battery protection or in other switching application. Features V DS = 30V, lD = 3.6A R

 8.1. Size:762K  wpmtek
 wtm2302.pdf pdf_icon

WTM2306

WTM2302 N-Channel Enhancement Mode Power MOSFET Description The WTM2302 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features V DS = 20V, lD = 2.6A R

 8.2. Size:730K  wpmtek
 wtm2300.pdf pdf_icon

WTM2306

WTM2300 N-Channel Enhancement Mode Power MOSFET Description The WTM2300 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features V DS = 20V, lD = 6A R

 8.3. Size:718K  wpmtek
 wtm2301.pdf pdf_icon

WTM2306

WTM2301 P-Channel Enhancement Mode Power MOSFET Description The WTM2301 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features V DS = -20V, lD = -3A R

MOSTRAR MÁS

Otros transistores... WFF5N65L , WFF8N65L , WFJ5N65B , WFU2N65L , WTM2300 , WTM2301 , WTM2302 , WTM2305 , 2N7000 , WTM3400 , WTM3401 , WTM3415 , TX15N10B , TX40N06B , TX50N06 , XG65T125PS1B , XG65T230PS1B .

History: NCE3401AY | WML15N65F2 | FDB3632 | FDD6644

 

 

 

 

↑ Back to Top
.