WTM2306
MOSFET. Datasheet pdf. Equivalent
Type Designator: WTM2306
Marking Code: A6SHB
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 3.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 40
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058
Ohm
Package:
SOT23
WTM2306
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WTM2306
Datasheet (PDF)
..1. Size:782K wpmtek
wtm2306.pdf
WTM2306N-Channel Enhancement Mode Power MOSFETDescription The WTM2306 uses advanced trench technology to provideexcellent R , This device is suitable for use as aDS(ON)battery protection or in other switching application.Features V DS = 30V, lD = 3.6AR
8.1. Size:762K wpmtek
wtm2302.pdf
WTM2302N-Channel Enhancement Mode Power MOSFETDescription The WTM2302 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 2.6AR
8.2. Size:730K wpmtek
wtm2300.pdf
WTM2300N-Channel Enhancement Mode Power MOSFETDescription The WTM2300 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 6AR
8.3. Size:718K wpmtek
wtm2301.pdf
WTM2301P-Channel Enhancement Mode Power MOSFET Description The WTM2301 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = -20V, lD = -3AR
8.4. Size:742K wpmtek
wtm2305.pdf
WTM2305P-Channel Enhancement Mode Power MOSFET Description The WTM2305 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = -20V, lD = -4.1AR
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.