WTM2306 Datasheet and Replacement
Type Designator: WTM2306
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SOT23
WTM2306 substitution
WTM2306 Datasheet (PDF)
wtm2306.pdf

WTM2306N-Channel Enhancement Mode Power MOSFETDescription The WTM2306 uses advanced trench technology to provideexcellent R , This device is suitable for use as aDS(ON)battery protection or in other switching application.Features V DS = 30V, lD = 3.6AR
wtm2302.pdf

WTM2302N-Channel Enhancement Mode Power MOSFETDescription The WTM2302 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 2.6AR
wtm2300.pdf

WTM2300N-Channel Enhancement Mode Power MOSFETDescription The WTM2300 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 6AR
wtm2301.pdf

WTM2301P-Channel Enhancement Mode Power MOSFET Description The WTM2301 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = -20V, lD = -3AR
Datasheet: WFF5N65L , WFF8N65L , WFJ5N65B , WFU2N65L , WTM2300 , WTM2301 , WTM2302 , WTM2305 , IRF9540 , WTM3400 , WTM3401 , WTM3415 , TX15N10B , TX40N06B , TX50N06 , XG65T125PS1B , XG65T230PS1B .
Keywords - WTM2306 MOSFET datasheet
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