SL150N03Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SL150N03Q

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 166 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 945 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm

Encapsulados: DFN5X6-8L

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SL150N03Q datasheet

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sl150n03q.pdf pdf_icon

SL150N03Q

SL150N03Q N-Channel Power MOSFET General Features VDS =30V,ID =150A RDS(ON)

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ap60sl150ar.pdf pdf_icon

SL150N03Q

AP60SL150AR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3 20A G RoHS Compliant & Halogen-Free S Description AP60SL150A series are from Advanced Power innovated design and silicon process technology to achieve the l

 9.2. Size:204K  ape
ap60sl150ap.pdf pdf_icon

SL150N03Q

AP60SL150AP Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3 20A G RoHS Compliant & Halogen-Free S Description AP60SL150A series are from Advanced Power innovated design and silicon process technology to achieve the l

 9.3. Size:220K  ape
ap60sl150ai.pdf pdf_icon

SL150N03Q

AP60SL150AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3,4 20A G RoHS Compliant & Halogen-Free S Description AP60SL150A series are from Advanced Power innovated design and silicon process technology to achieve the

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