All MOSFET. SL150N03Q Datasheet

 

SL150N03Q Datasheet and Replacement


   Type Designator: SL150N03Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 945 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: DFN5X6-8L
 

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SL150N03Q Datasheet (PDF)

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SL150N03Q

SL150N03QN-Channel Power MOSFET General Features VDS =30V,ID =150ARDS(ON)

 9.1. Size:209K  ape
 ap60sl150ar.pdf pdf_icon

SL150N03Q

AP60SL150ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the l

 9.2. Size:204K  ape
 ap60sl150ap.pdf pdf_icon

SL150N03Q

AP60SL150APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the l

 9.3. Size:220K  ape
 ap60sl150ai.pdf pdf_icon

SL150N03Q

AP60SL150AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the

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History: CEB08N8 | TSF18N50MR | STN4438 | STN3414 | BUK9K18-40E | CS6N70F | YJG90G10A

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