6435 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDP-Channel Enhancement Mode Power MOSFET 643530V P-Channel MOSFETPDFN5X6-8LV(BR)DSS RDS(on)MAX IDTop View Bottom View0.012@-10.V-30V-34 A0.020@ -5.0VPIN1General FEATURETrenchFET Power MOSFETEquivalent CircuitMarkingLead free product is acquired D D D DDSurface mount package6435TFCYWPGAPP

JSM6435P-Channel Enhancement Mode Power MOSFET P-Channel Enhancement Mode Power MOSFET 30V P-Channel MOSFETPDFN5X6-8LV(BR)DSS RDS(on)MAX IDTop View Bottom View0.012@-10.V-30V-34 A0.020@ -5.0VPIN1General FEATURETower MOSFET Equivalent CircuitMarkingLead free product is acquired D D D DDSurface mount package6435GAPPLICATIONSS S S G

Si6435ADQVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.030 at VGS = - 10 V 5.5- 30RoHS0.055 at VGS = - 4.5 V 4.1COMPLIANTS*GTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.D D1 8S S2 7Si6435ADQS S3 6G D4 5DTop ViewP-Channel MO

AON643530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON6435 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -34Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

SI6435ADQ-T1www.VBsemi.twP-Channel 20-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = - 4.5 V Available- 9.0RoHS*0.015 at VGS = - 2.5 V -20 - 7.8COMPLIANT0.020 at VGS = - 1.8 V - 6.0S*TSSOP-8 GD D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7 S S 3