6435 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 6435
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 34 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: PDFN5X6-8L

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6435 Datasheet (PDF)

..1. Size:3461K cn tuofeng
6435.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDP-Channel Enhancement Mode Power MOSFET 643530V P-Channel MOSFETPDFN5X6-8LV(BR)DSS RDS(on)MAX IDTop View Bottom View0.012@-10.V-30V-34 A0.020@ -5.0VPIN1General FEATURETrenchFET Power MOSFETEquivalent CircuitMarkingLead free product is acquired D D D DDSurface mount package6435TFCYWPGAPP

0.1. Size:4760K 1
jsm6435.pdf

JSM6435P-Channel Enhancement Mode Power MOSFET P-Channel Enhancement Mode Power MOSFET 30V P-Channel MOSFETPDFN5X6-8LV(BR)DSS RDS(on)MAX IDTop View Bottom View0.012@-10.V-30V-34 A0.020@ -5.0VPIN1General FEATURETower MOSFET Equivalent CircuitMarkingLead free product is acquired D D D DDSurface mount package6435GAPPLICATIONSS S S G

0.2. Size:198K vishay
si6435adq.pdf

Si6435ADQVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.030 at VGS = - 10 V 5.5- 30RoHS0.055 at VGS = - 4.5 V 4.1COMPLIANTS*GTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.D D1 8S S2 7Si6435ADQS S3 6G D4 5DTop ViewP-Channel MO

0.3. Size:267K aosemi
aon6435.pdf

AON643530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON6435 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -34Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

0.4. Size:864K cn vbsemi
si6435adq-t1.pdf

SI6435ADQ-T1www.VBsemi.twP-Channel 20-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = - 4.5 V Available- 9.0RoHS*0.015 at VGS = - 2.5 V -20 - 7.8COMPLIANT0.020 at VGS = - 1.8 V - 6.0S*TSSOP-8 GD D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7 S S 3

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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