6435 Todos los transistores

 ..1. Size:3461K  cn tuofeng
 6435.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD P-Channel Enhancement Mode Power MOSFET 6435 30V P-Channel MOSFET PDFN5X6-8L V(BR)DSS RDS(on)MAX ID Top View Bottom View 0.012 @-10 . V -30V -34 A 0.020 @ -5.0V PIN1 General FEATURE TrenchFET Power MOSFET Equivalent Circuit Marking Lead free product is acquired D D D D D Surface mount package 6435 TFCYWP G APP

 0.1. Size:4760K  1
 jsm6435.pdf

 0.2. Size:198K  vishay
 si6435adq.pdf

Si6435ADQ Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.030 at VGS = - 10 V 5.5 - 30 RoHS 0.055 at VGS = - 4.5 V 4.1 COMPLIANT S* G TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 S S 2 7 Si6435ADQ S S 3 6 G D 4 5 D Top View P-Channel MO

 0.3. Size:267K  aosemi
 aon6435.pdf

AON6435 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON6435 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -34A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

 0.4. Size:864K  cn vbsemi
 si6435adq-t1.pdf

SI6435ADQ-T1 www.VBsemi.tw P-Channel 20-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.012 at VGS = - 4.5 V Available - 9.0 RoHS* 0.015 at VGS = - 2.5 V -20 - 7.8 COMPLIANT 0.020 at VGS = - 1.8 V - 6.0 S* TSSOP-8 G D D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common. 2 7 S S 3