6435 MOSFET. Datasheet pdf. Equivalent
Type Designator: 6435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 34 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 240 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: PDFN5X6-8L
6435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
6435 Datasheet (PDF)
6435.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDP-Channel Enhancement Mode Power MOSFET 643530V P-Channel MOSFETPDFN5X6-8LV(BR)DSS RDS(on)MAX IDTop View Bottom View0.012@-10.V-30V-34 A0.020@ -5.0VPIN1General FEATURETrenchFET Power MOSFETEquivalent CircuitMarkingLead free product is acquired D D D DDSurface mount package6435TFCYWPGAPP
jsm6435.pdf
JSM6435P-Channel Enhancement Mode Power MOSFET P-Channel Enhancement Mode Power MOSFET 30V P-Channel MOSFETPDFN5X6-8LV(BR)DSS RDS(on)MAX IDTop View Bottom View0.012@-10.V-30V-34 A0.020@ -5.0VPIN1General FEATURETower MOSFET Equivalent CircuitMarkingLead free product is acquired D D D DDSurface mount package6435GAPPLICATIONSS S S G
si6435adq.pdf
Si6435ADQVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.030 at VGS = - 10 V 5.5- 30RoHS0.055 at VGS = - 4.5 V 4.1COMPLIANTS*GTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.D D1 8S S2 7Si6435ADQS S3 6G D4 5DTop ViewP-Channel MO
aon6435.pdf
AON643530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON6435 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -34Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
si6435adq-t1.pdf
SI6435ADQ-T1www.VBsemi.twP-Channel 20-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = - 4.5 V Available- 9.0RoHS*0.015 at VGS = - 2.5 V -20 - 7.8COMPLIANT0.020 at VGS = - 1.8 V - 6.0S*TSSOP-8 GD D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7 S S 3
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