6435 Specs and Replacement
Type Designator: 6435
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 240 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: PDFN5X6-8L
6435 substitution
- MOSFET ⓘ Cross-Reference Search
6435 datasheet
6435.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD P-Channel Enhancement Mode Power MOSFET 6435 30V P-Channel MOSFET PDFN5X6-8L V(BR)DSS RDS(on)MAX ID Top View Bottom View 0.012 @-10 . V -30V -34 A 0.020 @ -5.0V PIN1 General FEATURE TrenchFET Power MOSFET Equivalent Circuit Marking Lead free product is acquired D D D D D Surface mount package 6435 TFCYWP G APP... See More ⇒
si6435adq.pdf
Si6435ADQ Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.030 at VGS = - 10 V 5.5 - 30 RoHS 0.055 at VGS = - 4.5 V 4.1 COMPLIANT S* G TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 S S 2 7 Si6435ADQ S S 3 6 G D 4 5 D Top View P-Channel MO... See More ⇒
aon6435.pdf
AON6435 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON6435 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -34A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) ... See More ⇒
Detailed specifications: 2SK3099LS, IPB051N08N, NDD04N60Z-1G, 15N10, 15N10B, 3482, 4420, 4803A, IRFZ24N, 6764, 7240, 7409, 7409B, 7410, 7430, 7506, 7788
Keywords - 6435 MOSFET specs
6435 cross reference
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