7240 Todos los transistores

 

7240 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 7240
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 36.7 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 40 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
   Carga de la puerta (Qg): 27.8 nC
   Tiempo de subida (tr): 3 nS
   Conductancia de drenaje-sustrato (Cd): 521 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0055 Ohm
   Paquete / Cubierta: PDFN5X6-8L

 Búsqueda de reemplazo de MOSFET 7240

 

7240 Datasheet (PDF)

 ..1. Size:3334K  cn tuofeng
7240.pdf

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7240

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN-Channel Enhancement Mode Power MOSFET 724040V N-Channel MOSFET PDFN5X6-8LTop View Bottom ViewPRODUCT SUMMARYVDS40V40A ID (at VGS=10V)

 0.1. Size:4319K  1
jsm7240.pdf

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JSM7240N-Channel Enhancement Mode Power MOSFETN-Channel Enhancement Mode Power MOSFET40V N-Channel MOSFET PDFN5X6-8LTop View Bottom ViewPRODUCT SUMMARYVDS40V40A ID (at VGS=10V)

 0.2. Size:229K  international rectifier
irf7240.pdf

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7240

PD- 93916IRF7240HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET-40V 0.015@VGS = -10V -10.5A Surface Mount0.025@VGS = -4.5V -8.4A Available in Tape & ReelA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistance per silicon3 6

 0.3. Size:121K  international rectifier
irf7240pbf.pdf

7240
7240

PD- 95253IRF7240PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET-40V 0.015@VGS = -10V -10.5Al Surface Mount0.025@VGS = -4.5V -8.4Al Available in Tape & Reell Lead-FreeA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistan

 0.4. Size:284K  philips
buk7240-100a 01.pdf

7240
7240

BUK7240-100ATrenchMOS standard level FETRev. 01 03 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7240-100A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated St

 0.5. Size:882K  nxp
buk7240-100a.pdf

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BUK7240-100AN-channel TrenchMOS standard level FETRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.

 0.6. Size:121K  infineon
irf7240pbf.pdf

7240
7240

PD- 95253IRF7240PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET-40V 0.015@VGS = -10V -10.5Al Surface Mount0.025@VGS = -4.5V -8.4Al Available in Tape & Reell Lead-FreeA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistan

 0.7. Size:151K  aosemi
aon7240.pdf

7240
7240

AON724040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON7240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 40Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 0.8. Size:1045K  cn vbsemi
vbza7240.pdf

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VBZA7240www.VBsemi.comP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.013 at VGS = - 10 V - 11 100 % Rg Tested- 40 33 nC0.015 at VGS = - 4.5 V - 10 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD1 8

 0.9. Size:736K  cn vbsemi
irf7240trpbf.pdf

7240
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IRF7240TRPBFwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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