7240 Todos los transistores

 ..1. Size:3334K  cn tuofeng
 7240.pdf

 0.1. Size:4319K  1
 jsm7240.pdf

JSM7240 N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET 40V N-Channel MOSFET PDFN5X6-8L Top View Bottom View PRODUCT SUMMARY VDS 40V 40A ID (at VGS=10V)

 0.2. Size:229K  international rectifier
 irf7240.pdf

PD- 93916 IRF7240 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -40V 0.015@VGS = -10V -10.5A Surface Mount 0.025@VGS = -4.5V -8.4A Available in Tape & Reel A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon 3 6

 0.3. Size:121K  international rectifier
 irf7240pbf.pdf

PD- 95253 IRF7240PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -40V 0.015@VGS = -10V -10.5A l Surface Mount 0.025@VGS = -4.5V -8.4A l Available in Tape & Reel l Lead-Free A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to achieve the extremely low on-resistan

 0.4. Size:284K  philips
 buk7240-100a 01.pdf

BUK7240-100A TrenchMOS standard level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7240-100A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated St

 0.5. Size:882K  nxp
 buk7240-100a.pdf

BUK7240-100A N-channel TrenchMOS standard level FET Rev. 2 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.

 0.6. Size:151K  aosemi
 aon7240.pdf

AON7240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON7240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 0.7. Size:1045K  cn vbsemi
 vbza7240.pdf

VBZA7240 www.VBsemi.com P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.013 at VGS = - 10 V - 11 100 % Rg Tested - 40 33 nC 0.015 at VGS = - 4.5 V - 10 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD 1 8

 0.8. Size:736K  cn vbsemi
 irf7240trpbf.pdf

IRF7240TRPBF www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD