7240 - описание и поиск аналогов

JSM7240 N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET 40V N-Channel MOSFET PDFN5X6-8L Top View Bottom View PRODUCT SUMMARY VDS 40V 40A ID (at VGS=10V)

PD- 93916 IRF7240 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -40V 0.015@VGS = -10V -10.5A Surface Mount 0.025@VGS = -4.5V -8.4A Available in Tape & Reel A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon 3 6

PD- 95253 IRF7240PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -40V 0.015@VGS = -10V -10.5A l Surface Mount 0.025@VGS = -4.5V -8.4A l Available in Tape & Reel l Lead-Free A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to achieve the extremely low on-resistan

BUK7240-100A TrenchMOS standard level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7240-100A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated St

BUK7240-100A N-channel TrenchMOS standard level FET Rev. 2 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.

AON7240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON7240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

VBZA7240 www.VBsemi.com P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.013 at VGS = - 10 V - 11 100 % Rg Tested - 40 33 nC 0.015 at VGS = - 4.5 V - 10 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD 1 8

IRF7240TRPBF www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD