7409 Todos los transistores

 ..1. Size:1580K  cn tuofeng
 7409.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD P-Channel Enhancement Mode Power MOSFET 7409 PDFN3X3-8L 30V P-Channel MOSFET 1 8 PRODUCT SUMMARY 2 7 VDS -30V 3 6 ID (at VGS=-10V) -32A 4 5 RDS(ON) (at VGS=-10V)

 0.1. Size:1632K  1
 jsm7409b.pdf

JSM7409B Plastic-Encapsulate MOSFETS PDFN3X3-8L Description The JSM7409B uses advanced trench technology to 1 8 provide excellent RDS(ON), low gate charge and operation 2 7 3 6 with gate voltages as low as 4.5V. 4 5 General Features Equivalent Cir cuit VDS = -30V,ID = -25A D RDS(ON)

 0.2. Size:1911K  1
 jsm7409.pdf

 0.3. Size:323K  1
 aon7409.pdf

AON7409 30V P-Channel MOSFET General Description Product Summary VDS The AON7409 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -32A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 0.4. Size:486K  vishay
 si7409adn.pdf

Si7409ADN Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.019 at VGS = - 4.5 V - 11 TrenchFET Power MOSFET - 30 25 0.031 at VGS = - 2.5 V - 8.5 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile VDS Optimized for Load Switch

 0.5. Size:323K  aosemi
 aon7409.pdf

AON7409 30V P-Channel MOSFET General Description Product Summary VDS The AON7409 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -32A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 0.6. Size:1428K  cn tuofeng
 7409b.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD PDFN 3x3 Plastic-Encapsulate MOSFETS 7409B P-Channel Enhancement Mode Power MOSFET PDFN3X3-8L Description The 7409B uses advanced trench technology to provide 1 8 excellent RDS(ON), low gate charge and operation with gate 2 7 3 6 voltages as low as 4.5V. 4 5 General Features Equivalent Cir cuit VDS = -30V,ID = -25A