All MOSFET. 7409 Datasheet

 

7409 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 7409
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 474 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: PDFN3X3-8L

 7409 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

7409 Datasheet (PDF)

 ..1. Size:1580K  cn tuofeng
 7409.pdf

7409 7409

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDP-Channel Enhancement Mode Power MOSFET 7409PDFN3X3-8L30V P-Channel MOSFET18PRODUCT SUMMARY27VDS-30V36 ID (at VGS=-10V) -32A45 RDS(ON) (at VGS=-10V)

 0.1. Size:1632K  1
 jsm7409b.pdf

7409 7409

JSM7409BPlastic-Encapsulate MOSFETSPDFN3X3-8LDescription The JSM7409B uses advanced trench technology to 18provide excellent RDS(ON), low gate charge and operation 2736with gate voltages as low as 4.5V. 45General Features Equivalent Cir cuit VDS = -30V,ID = -25A D RDS(ON)

 0.2. Size:1911K  1
 jsm7409.pdf

7409 7409

JSM7409P-Channel Enhancement Mode Power MOSFET PDFN3X3-8L30V P-Channel MOSFET18PRODUCT SUMMARY27VDS-30V36 ID (at VGS=-10V) -32A45 RDS(ON) (at VGS=-10V)

 0.3. Size:323K  1
 aon7409.pdf

7409 7409

AON740930V P-Channel MOSFETGeneral Description Product SummaryVDS The AON7409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -32Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 0.4. Size:486K  vishay
 si7409adn.pdf

7409 7409

Si7409ADNVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.019 at VGS = - 4.5 V - 11 TrenchFET Power MOSFET- 30 250.031 at VGS = - 2.5 V - 8.5 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile VDS Optimized for Load Switch

 0.5. Size:323K  aosemi
 aon7409.pdf

7409 7409

AON740930V P-Channel MOSFETGeneral Description Product SummaryVDS The AON7409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -32Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 0.6. Size:1428K  cn tuofeng
 7409b.pdf

7409

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDPDFN 3x3 Plastic-Encapsulate MOSFETS 7409BP-Channel Enhancement Mode Power MOSFET PDFN3X3-8LDescription The 7409B uses advanced trench technology to provide 18excellent RDS(ON), low gate charge and operation with gate 2736voltages as low as 4.5V. 45General Features Equivalent Cir cuit VDS = -30V,ID = -25A

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: AON6422

 

 
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