WSD2012DN25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WSD2012DN25
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 12.5 nC
   trⓘ - Tiempo de subida: 2600 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
   Paquete / Cubierta: DFN2X5

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WSD2012DN25 Datasheet (PDF)

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wsd2012dn25.pdf

WSD2012DN25N-Ch MOSFETGeneral Description Product SummeryThe WSD2012DN25 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 9.5m(max)density , which provide excellent RDSON and gate 20V 11Acharge for most of the small power switching and load switch applications. Applications The WSD2012DN25 meet the RoHS and Green Power management

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wsd2018adn22.pdf

WSD2018ADN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018ADN22 is the highestBVDSS RDSON ID performance trench N-Ch MOSFET withextreme high cell density , which provide20V 9.5m 11Aexcellent RDSON and gate charge for most ofthe small power switching and load switchApplications applications.The WSD2018ADN22 meet the RoHS and High Frequency Point-of-Load S

8.2. Size:2643K winsok
wsd2018dn22.pdf

WSD2018DN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 15m(MAX) 12Agate charge for most of the small power switching and load switch applications. Applications The WSD2018DN22 meet the RoHS and Green Product requirement

8.3. Size:1786K winsok
wsd2018bdn22.pdf

WSD2018BDN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018BDN22 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 12V 11.5m(MAX) 12.3Aexcellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSD2018BDN22 meet the RoHS and Green Product req

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