WSD2012DN25 PDF and Equivalents Search

 

WSD2012DN25 Specs and Replacement

Type Designator: WSD2012DN25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2600 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: DFN2X5

WSD2012DN25 substitution

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WSD2012DN25 datasheet

 ..1. Size:1316K  winsok
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WSD2012DN25

WSD2012DN25 N-Ch MOSFET General Description Product Summery The WSD2012DN25 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 9.5m (max) density , which provide excellent RDSON and gate 20V 11A charge for most of the small power switching and load switch applications. Applications The WSD2012DN25 meet the RoHS and Green Power management ... See More ⇒

 8.1. Size:1808K  winsok
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WSD2012DN25

WSD2018ADN22 N-Ch MOSFET General Description Product Summery The WSD2018ADN22 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 20V 9.5m 11A excellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WSD2018ADN22 meet the RoHS and High Frequency Point-of-Load S... See More ⇒

 8.2. Size:2643K  winsok
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WSD2012DN25

WSD2018DN22 N-Ch MOSFET General Description Product Summery The WSD2018DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 15m (MAX) 12A gate charge for most of the small power switching and load switch applications. Applications The WSD2018DN22 meet the RoHS and Green Product requirement ... See More ⇒

 8.3. Size:1786K  winsok
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WSD2012DN25

WSD2018BDN22 N-Ch MOSFET General Description Product Summery The WSD2018BDN22 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 12V 11.5m (MAX) 12.3A excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSD2018BDN22 meet the RoHS and Green Product req... See More ⇒

Detailed specifications: WSC15N10, WSC40N06, WSC5N20A, WSC60N03, WSD100N06GDN56, WSD1216DN22, WSD14N10DNG, WSD1614DN, AON7506, WSD2018ADN22, WSD2018BDN22, WSD2018DN22, WSD2050DN, WSD2054DN22, WSD2068, WSD2075DN, WSD2090DN56

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