WSD2012DN25 - описание и поиск аналогов

WSD2012DN25 N-Ch MOSFET General Description Product Summery The WSD2012DN25 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 9.5m (max) density , which provide excellent RDSON and gate 20V 11A charge for most of the small power switching and load switch applications. Applications The WSD2012DN25 meet the RoHS and Green Power management

WSD2018ADN22 N-Ch MOSFET General Description Product Summery The WSD2018ADN22 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 20V 9.5m 11A excellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WSD2018ADN22 meet the RoHS and High Frequency Point-of-Load S

WSD2018DN22 N-Ch MOSFET General Description Product Summery The WSD2018DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 15m (MAX) 12A gate charge for most of the small power switching and load switch applications. Applications The WSD2018DN22 meet the RoHS and Green Product requirement

WSD2018BDN22 N-Ch MOSFET General Description Product Summery The WSD2018BDN22 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 12V 11.5m (MAX) 12.3A excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSD2018BDN22 meet the RoHS and Green Product req