WSD20L50DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSD20L50DN
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VQgⓘ - Carga de la puerta: 25 nC
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 320 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: DFN3.3X3.3A-8-EP
Búsqueda de reemplazo de MOSFET WSD20L50DN
WSD20L50DN Datasheet (PDF)
wsd20l50dn.pdf
WSD20L50DNP-Ch MOSFETGeneral Description Product SummeryThe WSD20L50DN is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and -20V 9.0m -50Agate charge for most of the synchronous buck converter applications . Applications The WSD20L50DN meet the RoHS and Green Product requirement 100% EAS
wsd20l120dn56.pdf
WSD20L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD20L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -20V 2.1m -120Acharge for most of the synchronous buck converter applications . Applications The WSD20L120DN56 meet the RoHS and High Frequency Point-of-Load Sy
wsd20l70dn.pdf
WSD20L70DNP-Ch MOSFETGeneral Description Product SummeryThe WSD20L70DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -20V 6.7m -70Agate charge for most of the synchronous buck converter applications . Applications The WSD20L70DN meet the RoHS and Green Product requirement 100% EAS gu
wsd20l75dn.pdf
WSD20L75DNP-Ch MOSFET Product SummeryGeneral Description Description The WSD20L75DN uses advanced BVDSS RDSON ID trench technology and design to provide excellent RDS(ON) with low gate charge. It can be -20V 4.8m -75Aused in a wide variety of applications. Applications Load switch Features Battery protection High density cell design for ultra low RdsonDFN3X
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
