WSD20L50DN Todos los transistores

 

WSD20L50DN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WSD20L50DN

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: DFN3.3X3.3A-8-EP

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WSD20L50DN datasheet

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wsd20l50dn.pdf pdf_icon

WSD20L50DN

WSD20L50DN P-Ch MOSFET General Description Product Summery The WSD20L50DN is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and -20V 9.0m -50A gate charge for most of the synchronous buck converter applications . Applications The WSD20L50DN meet the RoHS and Green Product requirement 100% EAS

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wsd20l120dn56.pdf pdf_icon

WSD20L50DN

WSD20L120DN56 P-Ch MOSFET General Description Product Summery The WSD20L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -20V 2.1m -120A charge for most of the synchronous buck converter applications . Applications The WSD20L120DN56 meet the RoHS and High Frequency Point-of-Load Sy

 8.2. Size:624K  winsok
wsd20l70dn.pdf pdf_icon

WSD20L50DN

WSD20L70DN P-Ch MOSFET General Description Product Summery The WSD20L70DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -20V 6.7m -70A gate charge for most of the synchronous buck converter applications . Applications The WSD20L70DN meet the RoHS and Green Product requirement 100% EAS gu

 8.3. Size:789K  winsok
wsd20l75dn.pdf pdf_icon

WSD20L50DN

WSD20L75DN P-Ch MOSFET Product Summery General Description Description The WSD20L75DN uses advanced BVDSS RDSON ID trench technology and design to provide excellent RDS(ON) with low gate charge. It can be -20V 4.8m -75A used in a wide variety of applications. Applications Load switch Features Battery protection High density cell design for ultra low Rdson DFN3X

Otros transistores... WSD2018DN22 , WSD2050DN , WSD2054DN22 , WSD2068 , WSD2075DN , WSD2090DN56 , WSD2098 , WSD20L120DN56 , 5N60 , WSD20L70DN , WSD20L75DN , WSD30100DN56 , WSD30140DN56 , WSD30150DN56 , WSD30160DN56 , WSD3020DN , WSD3023DN56 .

History: WSD2012DN25 | WSD6056DN56

 

 

 


History: WSD2012DN25 | WSD6056DN56

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