All MOSFET. WSD20L50DN Datasheet

 

WSD20L50DN Datasheet and Replacement


   Type Designator: WSD20L50DN
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 31.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN3.3X3.3A-8-EP
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WSD20L50DN Datasheet (PDF)

 ..1. Size:1043K  winsok
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WSD20L50DN

WSD20L50DNP-Ch MOSFETGeneral Description Product SummeryThe WSD20L50DN is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and -20V 9.0m -50Agate charge for most of the synchronous buck converter applications . Applications The WSD20L50DN meet the RoHS and Green Product requirement 100% EAS

 8.1. Size:1030K  winsok
wsd20l120dn56.pdf pdf_icon

WSD20L50DN

WSD20L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD20L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -20V 2.1m -120Acharge for most of the synchronous buck converter applications . Applications The WSD20L120DN56 meet the RoHS and High Frequency Point-of-Load Sy

 8.2. Size:624K  winsok
wsd20l70dn.pdf pdf_icon

WSD20L50DN

WSD20L70DNP-Ch MOSFETGeneral Description Product SummeryThe WSD20L70DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -20V 6.7m -70Agate charge for most of the synchronous buck converter applications . Applications The WSD20L70DN meet the RoHS and Green Product requirement 100% EAS gu

 8.3. Size:789K  winsok
wsd20l75dn.pdf pdf_icon

WSD20L50DN

WSD20L75DNP-Ch MOSFET Product SummeryGeneral Description Description The WSD20L75DN uses advanced BVDSS RDSON ID trench technology and design to provide excellent RDS(ON) with low gate charge. It can be -20V 4.8m -75Aused in a wide variety of applications. Applications Load switch Features Battery protection High density cell design for ultra low RdsonDFN3X

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FTK4N60D | 2SK1609 | 2SK2231 | IRF7490PBF | 2SK1553-01MR | SVS11N70MJD2 | WFP50N06

Keywords - WSD20L50DN MOSFET datasheet

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