WSD3067DN56 Todos los transistores

 

WSD3067DN56 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSD3067DN56
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 18.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10.5 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: DFN5X6C-8
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WSD3067DN56 Datasheet (PDF)

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WSD3067DN56

WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application

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WSD3067DN56

WSD3066DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3066DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which provide 30V 5.5m 45Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD3066DN meet the RoHS and High Frequency Point-of-Load Synchronous

 8.2. Size:3084K  winsok
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WSD3067DN56

WSD3069DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3069DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and 16A30V 15mgate charge for most of the synchronous buck converter applications . -30V 15m -16AThe WSD3069DN56 meet the RoHS and Green Applic

 9.1. Size:1410K  winsok
wsd30l20dn.pdf pdf_icon

WSD3067DN56

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WSD14N10DNG | 2N6659-2 | IPD12CN10NG | NVMFS020N06C | WSD2012DN25 | NCEAP40T17AD | STK28N3LLH5

 

 
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