WSD3067DN56 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WSD3067DN56
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 18.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 8.3 nC
trⓘ - Время нарастания: 10.5 ns
Cossⓘ - Выходная емкость: 105 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: DFN5X6C-8
Аналог (замена) для WSD3067DN56
WSD3067DN56 Datasheet (PDF)
wsd3067dn56.pdf
WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application
wsd3066dn.pdf
WSD3066DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3066DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which provide 30V 5.5m 45Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD3066DN meet the RoHS and High Frequency Point-of-Load Synchronous
wsd3069dn56.pdf
WSD3069DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3069DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and 16A30V 15mgate charge for most of the synchronous buck converter applications . -30V 15m -16AThe WSD3069DN56 meet the RoHS and Green Applic
wsd30l20dn.pdf
WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast
wsd3023dn56.pdf
WSD3023DN56 N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 30V 14m 14ARDSON and gate charge for most of the -12A-30V 23msynchronous buck converter applications . The WSD3023DN56 meet the RoHS and Applicatio
wsd3028dn.pdf
WSD3028DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3028DN is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 25m 19Agate charge for most of the synchronous buck converter applications . Applications The WSD3028DN meet the RoHS and High Frequency Point-of-Load Synchronous Gree
wsd30l90dn56.pdf
WSD30L90DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD30L90DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 6.4m -90Acharge for most of the synchronous buck converter applications . Applications The WSD30L90DN56 meet the RoHS and Green High Frequency Point-of-Load
wsd3030dn.pdf
WSD3030DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3030DN is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 10m 34Agate charge for most of the synchronous buck converter applications . Applications The WSD3030DN meet the RoHS and Green High Frequency Point-of-Load Synchronous
wsd3075dn56.pdf
WSD3075DN56N-Ch MOSFETGeneral Description Product SummeryThe WSD3075DN56 is the highest performance BVDSS RDSON IDtrench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 6.5m 75Agate charge for most of the synchronous buck converter applications . The WSD3075DN56 meet the RoHS and Green Applications Product requirement 100% EAS guar
wsd30100dn56.pdf
WSD30100DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD30100DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 3.3m 100Agate charge for most of the synchronous buck converter applications . Applications The WSD30100DN56 meet the RoHS and Green Product requirement 100% EAS
wsd3070dn.pdf
WSD3070DNN-Ch MOSFETFeatures Product Summery 100% UIS + R Testedg BVDSS RDSON ID Avalanche Rated25V 3.4m(max.) 70A Reliable an d Rugged Lead Fre e an d Green Devices AvailableDFN3.3x3.3-8-EP Pin Configuration (RoHS Complia nt)Applications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.Absolute Maximum Ratings (TA = 25C Unl
wsd3020dn.pdf
WSD3020DNDual N-Ch MOSFETGeneral Description Product SummeryThe WSD3020DN is the highest performance BVDSS RDSON ID trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON 30V 17m 21Aand gate charge for most of the synchronous buck converter applications . Applications The WSD3020DN meet the RoHS and High Frequency Point-of-Load Synchron
wsd3056dn.pdf
WSD3056DNDual N-Ch MOSFETProduct SummeryGeneral Description BVDSS RDSON ID30V 13m 35AThe WSD3056DN is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .Applications POL Applications MB / VGA / VcoreThe WSD3056DN meet the RoHS and Gre
wsd3042dn56.pdf
WSD3042DN56 N-Ch MOSFETFeatures Pin Description 30V/40A,RDS(ON)= 10.8m (max.) @ VGS=10V RDS(ON)= 12m (max.) @ VGS=4.5V RDS(ON)= 16m (max.) @ VGS=2.5V 100% UIS+Rg tested Reliable and RuggedDFN5x6A-8_EP Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management in Notebook Computer,Portable Equipment and Battery Powered Systems.
wsd3095dn56.pdf
WSD3095DN56N-Channel MOSFETGeneral Description Product SummeryThe WSD3095DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 95A30V 3.5mcharge for most of the synchronous buck converter applications . The WSD3095DN56 meet the RoHS and Green Applications Product requirement 100% E
wsd30l120dn56.pdf
WSD30L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD30L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 3.6m -120Acharge for most of the synchronous buck converter applications . Applications The WSD30L120DN56 meet the RoHS and Green High Frequency Point-of-L
wsd30l30dn.pdf
WSD30L30DNP-Ch MOSFETGeneral Description Product SummeryThe WSD30L30DN is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 15m -32Agate charge for most of the synchronous buck converter applications . Applications The WSD30L30DN meet the RoHS and Green Product requirement , 100% EAS guara
wsd30l60dn56.pdf
WSD30L60DN56P-Ch MOSFET Product SummeryFeatures -30V/-45A,RDS(ON) = 12m (max.) @ VGS =-10VRDS(ON) = 17m (max.) @ VGS =-6VRDS(ON) = 21m (max.) @ VGS =-4.5V Reliable and Rugged Lead Free and Green Devices AvailableDFN5X6A-8_EP (RoHS Compliant)Applications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.Absolute Maximum Ratings (T
wsd3050dn.pdf
WSD3050DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3050DN is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 7m 30V 50A gate charge for most of the synchronous buck converter applications . Applications The WSD3050DN meet the RoHS and Green Product requirement , 100% EAS guarante
wsd30160dn56.pdf
WSD30160DN56 N-Ch MOSFETProduct SummeryGeneral Description The WSD30160DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high celldensity ,which provide excellent RDSON and gate 30V 1.9m 120Acharge for most of the synchronous buck converter applications . Applications The WSD30160DN56 meet the RoHS and Green Product requirement , 100% EA
wsd3045dn.pdf
WSD3045DNN-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3045DN is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 10.5m30V 18ARDSON and gate charge for most of the synchronous buck converter applications . -15.3A-30V 24mThe WSD3045DN meet the RoHS and Green Product
wsd30140dn56.pdf
WSD30140DN56 N-Ch MOSFETProduct SummeryGeneral Description The WSD30140DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high celldensity ,which provide excellent RDSON and gate 30V 1.7m 85Acharge for most of the synchronous buck converter applications . Applications The WSD30140DN56 meet the RoHS and Green Product requirement , 100% EAS
wsd30l40dn.pdf
WSD30L40DNP-Ch MOSFETGeneral Description Product SummeryThe WSD30L40DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -30V 11m -40Agate charge for most of the synchronous buck converter applications . Applications The WSD30L40DN meet the RoHS and Green Product requirement 100% EAS gua
wsd30150dn56.pdf
WSD30150DN56 N-Ch MOSFETProduct SummeryGeneral Description The WSD30150DN56 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high celldensity ,which provide excellent RDSON and gate charge for most of 30V 1.8m 150Athe synchronous buck converter applications . Applications The WSD30150DN56 meet the RoHS and Green Product requirement , 100% EAS
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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